AM28F020A-120EC AMD [Advanced Micro Devices], AM28F020A-120EC Datasheet - Page 29

• Manufacturer Part Number: AM28F020A-120EC
• Description: 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS—WRITE (ERASE/PROGRAM) OPERATIONS
Alternate CE# Controlled Writes
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
2. Embedded Program Operation of 14 µs consists of 10 µs program pulse and 4 µs write recovery before read. This is the
3. Embedded erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
4. Not 100% tested.
Parameter Symbols
JEDEC
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
AVEL
ELAX
DVEH
EHDX
OEH
GHEL
WLEL
EHWK
ELEH
EHEL
EHEH3
EHEH4
VPEL
VCS
VPPR
VPPF
LKO
Characteristics for Read Only operations.
minimum time for one pass through the programming algorithm.
typical time for one embedded erase operation.
Standard
t
t
t
t
t
t
t
t
t
WC
AS
AH
DS
DH
WS
WH
CP
CPH
Description
Write Cycle Time (4)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Hold Time for Embedded
Algorithm only
Read Recovery Time Before Write
WE# Setup Time by CE#
WE# Hold Time
Write Pulse Width
Write Pulse Width High
Embedded Program Operation (2)
Embedded Erase Operation (3)
V
V
V
V
V
PP
CC
PP
PP
CC
Setup Time to Chip Enable Low (4)
Rise Time (4) 90% V
Fall Time (4) 90% V
Setup Time (4)
< V
LKO
to Reset (4)
PPL
PPH
Am28F020A
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Min
Min
Min
Min
100
500
500
100
-70
70
45
10
14
50
45
10
65
20
5
0
0
0
0
Am28F020A Speed Options
100
500
500
100
-90
90
45
45
10
10
65
20
14
50
0
0
0
0
5
-120
120
100
500
500
100
50
50
10
10
70
20
14
50
0
0
0
0
5
-150
150
100
500
500
100
60
50
10
10
80
20
14
50
0
0
0
0
5
-200
100
200
500
500
100
75
50
10
10
80
20
14
50
0
0
0
0
5
Unit
sec
ns
ns
ns
ns
ns
µs
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
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