AM29LV116B AMD [Advanced Micro Devices], AM29LV116B Datasheet

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AM29LV116B

Manufacturer Part Number
AM29LV116B
Description
16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
Am29LV116B
16 Megabit (2 M x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
— Regulated voltage range: 3.0 to 3.6 volt read
Manufactured on 0.35 µm process technology
High performance
— Full voltage range: access times as fast as 90 ns
— Regulated voltage range: access times as fast
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 15 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— Supports full chip erase
— Sector Protection features:
Unlock Bypass Program Command
— Reduces overall programming time when
operations for battery-powered applications
and write operations and for compatibility with
high performance 3.3 volt microprocessors
as 80 ns
thirty-one 64 Kbyte sectors
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
issuing multiple program command sequences
PRELIMINARY
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 1,000,000 write cycle guarantee per
sector
Package option
— 40-pin TSOP
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
Compatibility with JEDEC standards
— Pinout and software compatible with single-
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies data at specified addresses
system, allowing host software to easily
reconfigure for different Flash devices
power supply Flash
program or erase operation completion
program or erase cycle completion
or program data to, a sector that is not being
erased, then resumes the erase operation
array data
Publication# 21359
Issue Date: March 1998
Rev: C Amendment/+2

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AM29LV116B Summary of contents

Page 1

... PRELIMINARY Am29LV116B 16 Megabit ( 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors Manufactured on 0.35 µ ...

Page 2

... GENERAL DESCRIPTION The Am29LV116B Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. All read, program, and erase operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers ...

Page 3

... =3.0–3 2.7–3 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29LV116B Am29LV116B 80R 90 120 80 90 120 80 90 120 – DQ0 DQ7 Input/Output Buffers Data ...

Page 4

... DQ3 13 DQ2 14 DQ1 15 DQ0 40-Pin Standard TSOP 40-Pin Reverse TSOP Am29LV116B A17 A20 37 A19 36 A10 DQ7 35 DQ6 34 DQ5 33 DQ4 DQ3 ...

Page 5

... RY/BY# = Ready/Busy output V = 3.0 volt-only single power supply CC (see Product Selector Guide for speed options and voltage supply tolerances Device ground Pin not connected internally LOGIC SYMBOL 21 A0–A20 CE# OE# WE# RESET# Am29LV116B 8 DQ0–DQ7 RY/BY# 21359C-3 ...

Page 6

... T 80R Valid Combinations Am29LV116BT80R, Am29LV116BB80R Am29LV116BT90, Am29LV116BB90 EC, EI, EE, FC, FI, FE Am29LV116BT120, Am29LV116BB120 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (–40°C to +85° Extended (– ...

Page 7

... The command register itself does not occupy any addressable memory location. The register is composed of latches that store the com- mands, along with the address and data information needed to execute the command. The contents of the Table 1. Am29LV116B Device Bus Operations Operation Read Write Standby ...

Page 8

... Refer to the AC Characteristics tables for RESET# pa- rameters and to Figure 14 for the timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29LV116B in the DC Characteristics table CC5 RP ±0.3 V, the device RESET# is held CC4 ± ...

Page 9

... Table 2. Am29LV116BT Top Boot Sector Address Table Sector A20 A19 A18 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 ...

Page 10

... Table 3. Am29LV116BB Bottom Boot Sector Address Table Sector A20 A19 A18 A17 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...

Page 11

... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Table 4. Am29LV116B Autoselect Codes (High Voltage Method) Description CE# Manufacturer ID: AMD L Device ID: Am29LV116B L ...

Page 12

... Reset PLSCNT = 1 Increment PLSCNT No Yes PLSCNT = 1000? Yes Device failed Sector Unprotect Algorithm Am29LV116B START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes No All sectors protected? Yes ...

Page 13

... Power-Up Write Inhibit If WE device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Am29LV116B CC Write Inhibit is less than V , the device does not ac- LKO . The system must provide the ...

Page 14

... Typical timeout for full chip erase 2 N Max. timeout for byte/word write 2 N Max. timeout for buffer write 2 times typical Max. timeout per individual block erase 2 N Max. timeout for full chip erase 2 Am29LV116B Description Description N µs N µs (00h = not supported ...

Page 15

... Not Supported Number of sectors in per group Sector Temporary Unprotect Not Supported Supported Sector Protect/Unprotect scheme 01 = 29F040 mode 29F016 mode 29F400 mode 29LV800A mode Simultaneous Operation Not Supported Supported Burst Mode Type Not Supported Supported Page Mode Type Not Supported Word Page Word Page Am29LV116B N ...

Page 16

... DQ7, DQ6, or RY/BY#. See “Write Operation Status” for information on these status bits. Any commands written to the device during the Em- bedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program- ming operation. The Byte Program command se- Am29LV116B ID 16 ...

Page 17

... Characteristics” for parameters, and to Figure 15 for timing diagrams Embedded Program algorithm in progress Increment Address Note: See Table 9 for program command sequence. Figure 3. Program Operation Am29LV116B START Write Program Command Sequence Data Poll from System Verify Data? No Yes No Last Address? ...

Page 18

... After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device “erase Am29LV116B 18 ...

Page 19

... START Write Erase Command Sequence Data Poll from System No Data = FFh? Erasure Completed Notes: 1. See Table 9 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 4. Erase Operation Am29LV116B Embedded Erase algorithm in progress Yes 21359C-7 ...

Page 20

... Table 9. Am29LV116B Command Definitions Command Sequence (Note 1) Addr Read (Note Reset (Note 6) 1 XXX Manufacturer ID 4 555 Device ID, Top Boot Block 4 555 Device ID, Bottom Boot Block Sector Protect 4 555 Verify (Note 8) Byte Program 4 555 Unlock Bypass 3 555 Unlock Bypass Program ...

Page 21

... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 5. Data# Polling Algorithm Am29LV116B Yes Yes PASS 21359C-8 ...

Page 22

... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not completed the operation successfully, and the system Am29LV116B 22 ...

Page 23

... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 6. Toggle Bit Algorithm Am29LV116B (Note 1) No Yes Yes (Notes Yes ...

Page 24

... Table 10 shows the outputs for DQ3. Table 10. Write Operation Status DQ7 DQ5 (Note 2) DQ6 (Note 1) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29LV116B DQ2 DQ3 (Note 2) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N ...

Page 25

... Operating ranges define those limits between which the func- tionality of the device is guaranteed +0.8 V –0.5 V –2 Figure 7. Maximum Negative Overshoot Waveform +0.5 V 2.0 V Figure 8. Maximum Positive Overshoot Waveform Am29LV116B 21359C- 21359C-11 ...

Page 26

... 4.0 mA min I = –2 min I = –100 µ min . Typical specifications are for V IH Am29LV116B Min Typ Max Unit 1.0 µA 35 µA 1.0 µ 0.2 5 µA 0.2 5 µA 0.2 5 µA –0.5 0.8 ...

Page 27

... Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note 1000 1500 2000 Time Frequency in MHz Figure 10. Typical I vs. Frequency CC1 Am29LV116B 2500 3000 3500 3 4000 21359C-12 5 21359C-13 ...

Page 28

... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 21359C-14 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level Am29LV116B 80R 90, 120 Unit 1 TTL gate L 30 100 0.0–3 ...

Page 29

... Test Setup Read Toggle and Data# Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Output Valid Figure 13. Read Operations Timings Am29LV116B Speed Option 80R 90 120 Min 80 90 120 IL Max 80 90 120 IL Max 80 90 120 IL Max 30 ...

Page 30

... RESET Test Setup Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 14. RESET# Timings Am29LV116B All Speed Options Unit Max 20 µs Max 500 ns Min 500 ns Min 50 ns Min 20 µ ...

Page 31

... See the “Erase and Programming Performance” section for more information 80R Min 80 Min Min 45 Min 35 Min Min Min Min Min Min 35 Min Typ Typ Min Min Min Am29LV116B 90 120 Unit 90 120 ...

Page 32

... OUT Figure 15. Program Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase t Am29LV116B Read Status Data (last two cycles WHWH1 Status D OUT t RB Read Status Data WHWH2 In Complete Progress t BUSY RB ...

Page 33

... Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29LV116B VA High Z True Valid Data High Z True Valid Data 21359C- Valid Status Valid Data (stops toggling) 21359C-21 ...

Page 34

... Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 19. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29LV116B Erase Resume Erase Erase Complete Read 21359C-22 All Speed Options Unit 500 4 t VIDR 21359C-23 ns µ ...

Page 35

... WE# OE# Note: For sector protect For sector unprotect Figure 21. Sector Protect/Unprotect Timing Diagram Valid* Valid* 60h Sector Protect: 100 µs Sector Unprotect Am29LV116B Valid* Verify 40h Status 21359C-24 ...

Page 36

... See the “Erase and Programming Performance” section for more information 80R Min 80 Min Min 45 Min 35 Min Min Min Min Min Min 35 Min Typ Typ Am29LV116B 90 120 Unit 90 120 ...

Page 37

... PA for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29LV116B PA DQ7# D OUT = data written to OUT 21359C-25 ...

Page 38

... V, 1,000,000 cycles. CC –100 mA = 3.0 V, one pin at a time. CC Test Setup OUT V IN Test Conditions 150 C 125 C Am29LV116B Unit Comments s Excludes 00h programming prior to erasure (Note 4) s µs Excludes system level overhead (Note 1,000,000 cycles. Additionally, CC Min Max –1.0 V 12.5 V – ...

Page 39

... TSR040—40-Pin Reverse TSOP (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC * For reference only. BSC is an ANSI standard for Basic Space Centering 18.30 18.50 19.80 20.20 0˚ 5˚ 18.30 18.50 19.80 20.20 0˚ 5˚ 0.50 0.70 Am29LV116B 0.95 1.05 9.90 10.10 0.50 BSC 0.05 0.15 0.08 16-038-TSOP-1_AC 0.20 TS 040 0.10 4-25-96 lv 0.21 0.50 0.70 1.05 9.90 10.10 0.50 BSC 0.05 0.15 16-038-TSOP-1_AC 0.08 TSR040 0.20 4-25-96 lv ...

Page 40

... Figure 21, Sector Protect/Unprotect Timing Diagram A valid address is not required for the first write cycle; only the data 60h. Erase and Programming Performance In Note 2, the worst case endurance is now 1 million cycles. Am29LV116B . These parameters are WHWH2 . VCS . This parameter is not VIDR 40 ...

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