AM29F400B AMD [Advanced Micro Devices], AM29F400B Datasheet
AM29F400B
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AM29F400B Summary of contents
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... PRELIMINARY Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29F400 device High performance — ...
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... GENERAL DESCRIPTION The Am29F400B Mbit, 5.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7– DQ0. This device is designed to be programmed in- system with the standard system 5 ...
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... Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F400B -90 -120 -150 90 120 150 90 120 150 – DQ0 DQ15 (A-1) Input/Output Buffers Data STB Latch Y-Gating Cell Matrix ...
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... DQ11 14 DQ3 15 DQ10 16 DQ2 17 DQ9 18 DQ1 19 DQ8 20 DQ0 48-Pin TSOP—Standard Pinout 48-Pin TSOP—Reverse Pinout Am29F400B 48 A16 47 BYTE DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 ...
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... Device ground Pin not connected internally LOGIC SYMBOL 18 Am29F400B 44 RESET A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 33 BYTE DQ15/A-1 ...
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... EC, EI, FC, FI, SC, SI Am29F400BB-55 Am29F400BT-60, Am29F400BB-60 Am29F400BT-70, Am29F400BB-70 EC, EI, EE, Am29F400BT-90, FC, FI, FE, Am29F400BB-90 SC, SI, SE Am29F400BT-120, Am29F400BB-120 Am29F400BT-150, Am29F400BB-150 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (– ...
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... The command register it- self does not occupy any addressable memory loca- tion. The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of Table 1. Am29F400B Device Bus Operations Operation CE# Read L ...
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... Refer to the AC Characteristics tables for RESET# pa- rameters and to Figure 10 for the timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29F400B represents the standby current CC3 RP, , the device enters IL ±0.5 SS (during Embedded Algorithms) ...
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... Table 2. Am29F400BT Top Boot Block Sector Address Table Sector A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 Table 3. Am29F400BB Bottom Boot Block Sector Address Table ...
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... Table 4. Am29F400B Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29F400B Byte L (Top Boot Block) Device ID: Word L Am29F400B Byte L (Bottom Boot Block) Sector Protection Verification Logic Low = Logic High = V IL Sector Protection/Unprotection The hardware sector protection feature disables both pro- gram and erase operations in any sector ...
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... PROM programmers and requires V on address bit A9. The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any Am29F400B or WE initiate a write cycle and OE ...
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... Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately ter- minates the operation. The Chip Erase command se- quence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Am29F400B START Write Program Command Sequence Data Poll ...
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... The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the Am29F400B 13 ...
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... Command Sequence Data Poll from System No Data = FFh? Yes Erasure Completed Notes: 1. See Table 5 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Embedded Erase algorithm in progress 21505C-7 Am29F400B ...
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... Table 5. Am29F400B Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector Protect Verify 4 (Note 9) Byte Word Program 4 Byte Word ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F400B Yes Yes PASS 21505C-8 ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. Am29F400B 17 ...
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... To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been ac- cepted. Table 6 shows the outputs for DQ3. 21505C-9 Am29F400B ...
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... DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details Table 6. Write Operation Status DQ7 DQ5 (Note 2) DQ6 (Note 1) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29F400B DQ2 DQ3 (Note 2) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N ...
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... Operating ranges define those limits between which the func- tionality of the device is guaranteed +0.8 V –0.5 V –2.0 V Figure 6. Maximum Negative Overshoot +0.5 V 2.0 V Figure 7. Maximum Positive Overshoot Am29F400B 21505C-10 Waveform 21505C-11 Waveform ...
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... MHz, Word Mode max CE#, RESET#, and OE max 5.8 mA min I = –2.5 mA min . IH Am29F400B Min Typ Max Unit 1.0 µA 50 µA 1.0 µ 0 –0.5 0 2.0 V +0.5 11.5 12 ...
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... OE CE# and RESET 0 max 5.8 mA min I = –2.5 mA min I = –100 µ min . IH Am29F400B Min Typ Max Unit 1.0 µA 50 µA 1.0 µ 0.3 5 µA –0.5 0 ...
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... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 21505C-12 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F400B All -55 others Unit 1 TTL gate L 30 100 0.0– ...
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... OE Max 55 IL Max 30 Max 15 Max 15 Min Min Min t RC Addresses Stable t ACC OEH t CE HIGH Z Output Valid Figure 9. Read Operations Timings Am29F400B Speed Option -60 -70 -90 -120 -150 120 150 120 150 120 150 ...
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... Test Setup Max Max Min Min Min Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F400B All Speed Options Unit 20 µs 500 ns 500 21505C-14 25 ...
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... Address DQ15 Input Output t FHQV The falling edge of the last WE# signal t SET ( HOLD AH and t specifications Am29F400B -70 -90 -120 -150 Unit 120 150 ns Data Output (DQ0–DQ7) Address Input Data Output ...
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... Min Min Min Min Min Min Min Min Min Min Byte Typ Word Typ Typ Min Min Min Am29F400B -90 -120 -150 Unit 90 120 150 ...
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... Illustration shows device in word mode WPH A0h t BUSY is the true data at the program address. OUT Figure 13. Program Operation Timings Am29F400B Read Status Data (last two cycles WHWH1 Status D OUT t RB 21505C-17 ...
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... Illustration shows device in word mode. Figure 14. Chip/Sector Erase Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F400B Read Status Data WHWH2 In Complete Progress t t BUSY RB 21505C-18 29 ...
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... Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F400B VA High Z Valid Data True High Z Valid Data True 21505C- Valid Status Valid Data (stops toggling) 21505C-20 ...
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... Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 17. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29F400B Erase Resume Erase Erase Complete Read 21505C-21 All Speed Options 500 VIDR ...
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... -55 -60 -70 Min Min Min Min Min Min Min Min Min Min Min Byte Typ Word Typ Typ Am29F400B -90 -120 -150 Unit 90 120 150 ...
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... PA for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F400B PA DQ7# D OUT = Array Data. OUT 21505C-23 33 ...
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... V (4.75 V for -60), 1,000,000 cycles. CC –100 mA = 5.0 V, one pin at a time. CC Test Setup OUT V IN Test Conditions 150 C 125 C Am29F400B Unit Comments s Excludes 00h programming prior to erasure s µs µs Excludes system level overhead (Note 1,000,000 cycles. Additionally, CC Min Max –1.0 V 12.5 V – ...
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... MAX 0.25MM (0.0098") BSC TSR048 48-Pin Reverse Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC 18.30 18.50 19.80 20. 0.50 0. 18.30 18.50 19.80 20. 0.50 0.70 Am29F400B 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 16-038-TS48-2 0.08 TS 048 0.20 DT95 8-8-96 lv 0.10 0.21 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 SEATING PLANE 16-038-TS48 TSR048 0.08 DT95 0.20 8-8-96 lv 0.10 0.21 35 ...
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... PHYSICAL DIMENSIONS SO 044 44-Pin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 13.10 15.70 13.50 16.30 22 2.80 MAX. SEATING PLANE 0.10 0.35 Am29F400B 0.10 0.21 0 0.60 8 1.00 END VIEW 16-038-SO44-2 SO 044 DF83 8-8-96 lv ...
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... DS CP Temporary Sector Unprotect Table Added note reference for t 100% tested. Erase and Programming Performance Changed minimum 100K program and erase cycles guaranteed to 1,000,000. Am29F400B for -55 speed option. specification FHQV word WHWH1 . These parameters are WHWH2 . ...