AM29F200AB-120EC AMD [Advanced Micro Devices], AM29F200AB-120EC Datasheet - Page 2

• Manufacturer Part Number: AM29F200AB-120EC
• Description: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

GENERAL DESCRIPTION
The Am29F200A is a 2 Mbit, 5.0 Volt-only Flash mem-
ory organized as 262,144 bytes or 131,072 words. The
8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0–
DQ15. The Am29F200A is offered in 44-pin SO and
48-pin TSOP packages. This device is designed to be
programmed in-system with the standard system 5.0
volt V
program or erase operations. The device can also be
reprogrammed in standard EPROM programmers.
The standard device offers access times of 55, 70,
9 0 , 1 2 0 , a n d 1 5 0 n s, a l l o w i n g o p e r a t i o n o f
high-speed microprocessors without wait states. To
eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already pro-
grammed) before executing the erase operation. Dur-
2
CC
supply. A 12.0 volt V
PP
is not required for
P R E L I M I N A R Y
Am29F200A
ing erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6/
DQ2 (toggle) status bits. After a program or erase
cycle has been completed, the device is ready to read
array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash mem-
ory manufacturing experience to produce the highest lev-
els of quality, reliability and cost effectiveness. The device
electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunneling. The data is
programmed using hot electron injection.
CC
detector that automatically inhibits write opera-