AM29F100 AMD [Advanced Micro Devices], AM29F100 Datasheet - Page 33

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AM29F100

Manufacturer Part Number
AM29F100
Description
1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet

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ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 5.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTIC
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
Note: Includes all pins except V
Chip/Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time (Note 3)
Input Voltage with respect to V
V
Minimum Pattern Data Retention Time
Parameter
CC
Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
for further information on command definitions.
C
C
C
Current
OUT
IN2
IN
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
Parameter Description
A
= 25 C, f = 1.0 MHz.
Parameter Description
Parameter Description
SS
CC
on I/O pins
. Test conditions: V
Typ (Note 1)
CC
= 4.5 V, 100,000 cycles.
1.5
1.8
14
28
CC
Am29F100
= 5.0 Volt, one pin at a time.
V
V
V
IN
OUT
IN
Limits
= 0
= 0
Test Conditions
Max (Note 2)
= 0
1000
2000
125 C
150
12.5
15
Test Conditions
C
Unit
sec
sec
CC
s
s
, 100,000 cycles. Additionally,
–100 mA
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
–1.0 V
Min
Min
10
20
Typ
Comments
8.5
6
8
V
CC
+100 mA
Max
7.5
12
10
Max
Years
Years
Unit
+ 1.0 V
Unit
pF
pF
pF
33

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