AM29F016-120EC AMD [Advanced Micro Devices], AM29F016-120EC Datasheet - Page 34

• Manufacturer Part Number: AM29F016-120EC
• Description: 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25 C, 5 V V
2. Although Embedded Algorithms allow for a longer chip program and erase time, the actual time will be considerably less since
3. Under worst case condition of 90 C, 4.5 V V
LATCHUP CHARACTERISTIC
Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
34
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
Input Voltage with respect to V
V
Parameter
CC
Symbol
bytes program or erase significantly faster than the worst case byte.
C
C
C
Current
OUT
IN2
IN
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
CC
, 100,000 cycles.
A
= 25 C, f = 1.0 MHz.
Parameter Description
CC
. Test conditions: V
SS
on I/O pins
Min
CC
CC
= 5.0 Volt, one pin at a time.
, 100,000 cycles.
14.4 (Note 1) 43.2 (Notes 2, 3)
1 (Note 1)
Limits
Typ
32
7
Am29F016
V
V
V
IN
OUT
IN
= 0
= 0
= 0
300 (Note 3)
Test Conditions
Max
256
8
Unit
sec
sec
sec
s
–100 mA
–1.0 V
Min
Excludes 00H programming prior
to erasure
Excludes 00H programming prior
to erasure
Excludes system-level overhead
Excludes system-level overhead
Min
8.5
7.5
6
Comments
V
CC
+100 mA
Max
7.5
12
9
Max
+ 1.0 V
Unit
pF
pF
pF