AM29F010-120ECB AMD [Advanced Micro Devices], AM29F010-120ECB Datasheet - Page 11
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AM29F010-120ECB
Manufacturer Part Number
AM29F010-120ECB
Description
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
1.AM29F010-120ECB.pdf
(31 pages)
Note: See the appropriate Command Definitions table for
program command sequence.
Increment Address
Figure 1. Program Operation
in progress
Embedded
algorithm
Program
No
Command Sequence
Write Program
Last Address?
Programming
from System
Verify Data?
Completed
Data Poll
START
Yes
Yes
16736G-7
No
Am29F010
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. The Command
Definitions table shows the address and data require-
ments for the chip erase command sequence.
Any commands written to the chip during the Embed-
ded Erase algorithm are ignored.
The system can determine the status of the erase
operation by using DQ7 or DQ6. See “Write Opera-
tion Status” for information on these status bits.
When the Embedded Erase algorithm is complete,
the device returns to reading array data and ad-
dresses are no longer latched.
Figure 2 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to the Chip/Sector
Erase Operation Timings for timing waveforms.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock write cycles are then followed by the ad-
dress of the sector to be erased, and the sector erase
command. The Command Definitions table shows the
address and data requirements for the sector erase
command sequence.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
After the command sequence is written, a sector erase
time-out of 50 s begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time be-
tween these additional cycles must be less than 50 s,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
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