RM15 Mitsubishi Electric Semiconductor, RM15 Datasheet - Page 2
RM15
Manufacturer Part Number
RM15
Description
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
1.RM15.pdf
(3 pages)
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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
E
I
I
I
f
T
T
V
I
V
R
R
O
FSM
2 t
RRM
j
stg
RRM
RSM
a
iso
FM
th (j-c)
th (c-f)
Symbol
Symbol
Symbol
—
—
—
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
2 t
for fusing
Parameter
Parameter
Parameter
Three-phase full wave rectifying circuit, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M6
Typical value
T
T
Junction to case
Case to fin, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
j
j
=125 C, V
=25 C, I
FM
RRM
=30A, instantaneous meas.
applied
Test conditions
Conditions
HIGH VOLTAGE MEDIUM POWER GENERAL USE
Voltage class
C
=103 C
2000
2100
575
40
MITSUBISHI DIODE MODULES
Min.
10
—
—
—
—
–40~+125
–40~+125
0.98~1.47
0.98~1.47
1.0
Ratings
10~15
10~15
Limits
1000
3000
Typ.
500
405
30
—
—
—
—
—
10
RM15TC-40
3
INSULATED TYPE
Max.
1.0
1.2
0.3
0.1
—
kg·cm
kg·cm
Feb.1999
Unit
Unit
N·m
N·m
Unit
M
A
mA
C/ W
C/ W
Hz
V
V
V
A
A
V
g
V
2
C
C
s