QM500 Mitsubishi Electric Semiconductor, QM500 Datasheet
QM500
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QM500 Summary of contents
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... MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE • I Collector current ........................ 500A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 6 13.5 25 QM500HA-H INSULATED TYPE File No. E80271 Dimensions Feb.1999 ...
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... I =500A, V =2. =300V, I =500A, I =1A, –I =10A Transistor part Diode part Conductive grease applied MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 500 500 1780 10 5000 –40~+150 –40~+125 2500 1.96~2.94 20~30 kg·cm 1 ...
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... I =300A C T =25° =125° (A) B MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =25° =125° =2. ...
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... T =25° =125° 0.4 COLLECTOR-EMITTER REVERSE VOLTAGE QM500HA-H INSULATED TYPE I =–3A B2 –10A 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C 0.8 1.2 1.6 2.0 –V (V) CEO Feb.1999 ...
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... CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE 0.25 0.20 0.15 0.10 0.05 0 –3 –2 – TIME (s) MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE QM500HA-H INSULATED TYPE Feb.1999 ...