QM15 Mitsubishi Electric Semiconductor, QM15 Datasheet - Page 4

• Manufacturer Part Number: QM15
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
10
10
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
FORWARD BIAS SAFE OPERATING AREA
–1
3
2
7
5
4
3
2
7
5
4
3
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
10
COLLECTOR-EMITTER VOLTAGE V
10
2
0
1
10
3 4 5 7
TRANSIENT THERMAL IMPEDANCE
0
–3
BASE REVERSE CURRENT –I
T
NON-REPETITIVE
V
I
I
0
CHARACTERISTIC (TRANSISTOR)
B1
C
C
CC
2
2
2
=15A
=25°C
=0.3A
SWITCHING TIME VS. BASE
=300V
3
3
3
T
T
4
4
4
j
j
t
t
=25°C
=125°C
10
CURRENT (TYPICAL)
5
5
5
s
f
7
7
7
–1
10
10
10
–2
1
1
TIME (s)
2 3 4 5 7
2
2
2
3
3
3
4
4
4
5
5
5
7
7
10
10
–1
2
10
2
2
0
3
3
B2
4
4
(A)
5
5
CE
2 3
7
7
(V)
10
10
3
0
100
10
10
10
40
30
20
10
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
T
COLLECTOR-EMITTER REVERSE
CHARACTERISTICS) (TYPICAL)
j
20
=125°C
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
COLLECTOR
DISSIPATION
0.8
T
T
j
j
200
=25°C
=125°C
40
60
1.2
–V
CEO
400
80
(V)
1.6
100 120
SECOND
BREAKDOWN
AREA
I
B2
600
QM15HA-H
C
=–0.5A
2.0
INSULATED TYPE
–1A
( C)
140
CE
800
160
2.4
(V)
Feb.1999