A42L8316S AMIC Technology, A42L8316S Datasheet - Page 9
![no-image](/images/no-image-200.jpg)
A42L8316S
Manufacturer Part Number
A42L8316S
Description
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Manufacturer
AMIC Technology
Datasheet
1.A42L8316S.pdf
(25 pages)
AC Characteristics (continued)
Test Conditions:
PRELIMINARY
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
#
Input timing reference level: V
Output reference level: V
Output Load: 2TTL gate + CL (50pF)
Assumed t
Symbol
t
t
t
t
t
t
t
t
t
Std
t
t
t
t
RASP
RWC
RWD
CWD
AWD
t
t
PCM
CRW
OEH
OEP
CPA
CSR
CHR
RPC
PC
CP
T
=2ns
Read-Modify-Write Cycle Time
(Read-Modify-Write)
Modify-Write)
Column Address to WE Delay
Time (Read-Modify-Write)
Read or Write Cycle Time (EDO
Page)
Access Time from CAS Precharge
(EDO Page)
EDO Page Mode RMW Cycle Time
EDO Page Mode CAS Pulse Width
(RMW)
( CAS -before- RAS )
( CAS -before- RAS )
RAS to WE Delay Time
RAS Pulse Width
RAS to CAS Precharge Time
CAS to WE Delay Time (Read-
OE Hold Time from WE
OE High Pulse Width
CAS Precharge Time
CAS Setup Time
CAS Hold Time
(August, 2002, Version 0.1)
OH
/V
Parameter
OL
IH
/V
=2.0V/0.8V
IL
(VCC = 3.3V
=2.0V/0.8V
(EDO Page)
0.3V, VSS = 0V, Ta = 0 C to +70 C or -40 C to +85 C)
Min.
75
40
19
26
14
37
28
30
10
10
5
5
5
5
-
-30
8
200K
Max.
16
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
85
46
21
28
16
40
30
35
10
10
6
5
6
5
-
-35
200K
Max.
18
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
95
52
23
30
18
43
32
40
10
10
7
5
7
5
AMIC Technology, Inc.
-
-40
A42L8316 Series
200K
Max.
20
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
11
11
11
14
13
3
3
3