K6X4008C1F-B Samsung semiconductor, K6X4008C1F-B Datasheet - Page 5

• Manufacturer Part Number: K6X4008C1F-B
• Description: 512Kx8 bit Low Power full CMOS Static RAM
• Manufacturer: Samsung semiconductor

AC CHARACTERISTICS
(Vcc=4.5~5.5V, Commercial product: T
DATA RETENTION CHARACTERISTICS
K6X4008C1F Family
AC OPERATING CONDITIONS
TEST CONDITIONS
Read
Write
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): C
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Item
Parameter List
(Test Load and Test Input/Output Reference)
L
=100pF+1TTL
C
L
=50pF+1TTL
Symbol
A
=0 to 70 C, Industrial product: T
t
V
t
I
SDR
RDR
DR
DR
CS Vcc-0.2V
Vcc=3.0V, CS Vcc-0.2V
See data retention waveform
Test Condition
A
=-40 to 85 C, Automotive product: T
5
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
OHZ
t
t
OLZ
WC
CW
AW
WP
WR
DW
OW
RC
CO
OE
OH
DH
AA
HZ
AS
LZ
K6X4008C1F-B
K6X4008C1F-F
K6X4008C1F-Q
Min
1. Including scope and jig capacitance
55
10
10
55
45
45
40
25
5
0
0
0
0
0
0
5
-
-
-
C
L
55ns
1)
Max
55
55
25
20
20
20
Speed Bins
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
0
5
-
A
=-40 to 125 C)
Min
70
10
10
70
60
60
50
30
5
0
0
0
0
0
0
5
-
-
-
Typ
CMOS SRAM
-
-
-
-
70ns
Max
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
September 2003
Max
5.5
12
12
25
-
-
Revision 1.0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ms
V
A