K9F5608Q0B-DCB0 Samsung semiconductor, K9F5608Q0B-DCB0 Datasheet - Page 18

• Manufacturer Part Number: K9F5608Q0B-DCB0
• Description: 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
Pointer Operation of K9F5616X0B(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’ 00h’ command
sets the pointer to ’ A’ area(0~255word), and ’ 50h’ command sets the pointer to ’ B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’ 00h’ or ’ 50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’ A’ or ’ B’ area, ’ 00h’ or ’ 50h’ command must be inputted before ’ 80h’ command is
written. A complete read operation prior to ’ 80h’ command is not necessary.
Table 3. Destination of the pointer
(1) Command input sequence for programming ’ A’ area
(2) Command input sequence for programming ’ B’ area
Command
00h
50h
’ A’ ,’ B’ area can be programmed.
It depends on how many data are inputted.
00h
50h
Only ’ B’ area can be programmed.
Pointer position
256 ~ 263 word
The address pointer is set to ’ A’ area(0~255), and sustained
The address pointer is set to ’ B’ area(256~263), and sustained
0 ~ 255 word
80h
80h
Address / Data input
Address / Data input
spare array(B)
main array(A)
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
Area
10h
10h
18
’ 00h’ command can be omitted.
00h
50h
’ 50h’ command can be omitted.
Figure 5. Block Diagram of Pointer Operation
Pointer select
command
(00h, 50h)
(00h plane)
256 Word
"A" area
"A"
80h
80h
Address / Data input
Address / Data input
FLASH MEMORY
Pointer
10h
10h
(50h plane)
8 Word
"B" area
"B"
Page Register
Internal