K6T4008C Samsung semiconductor, K6T4008C Datasheet - Page 4

• Manufacturer Part Number: K6T4008C
• Description: 512Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

CAPACITANCE
1. Capacitance is sampled, not 100% tested
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: V
3. Undershoot: -3.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
K6T4008C1B Family
Input capacitance
Input/Output capacitance
Supply voltage
Ground
Input high voltage
Input low voltage
Input leakage current
Output leakage current
Operating power supply
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Industrial Product: T
Item
CC
+3.0V in case of pulse width
Item
Item
A
=-40 to 85 C, otherwise specified
1)
A
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
V
I
I
I
V
I
I
I
CC1
CC2
SB1
I
CC
LO
SB
OH
LI
OL
A
=25 C)
30ns
V
CS=V
I
Cycle time=1 s, 100% duty, I
CS 0.2V, V
Cycle time=Min, 100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
Symbol
IO
OL
OH
30ns
IN
=0mA, CS=V
=2.1mA
C
C
=-1.0mA
=Vss to Vcc
Symbol
IN
IO
IH
IH
Vcc
Vss
V
V
, Other inputs = V
IH
IL
or OE=V
IN
0.2V or V
IL
IH
, V
or WE=V
IN
Test Condition
Test Conditions
=V
IN
-0.5
V
V
IL
4
Min
4.5
2.2
IL
IN
IO
or V
0
or V
=0V
=0V
Vcc-0.2V
3)
IL
1)
IO
IO
, V
IH
=0mA, CS=V
=0mA
IH
, Read
IO
=Vss to Vcc
Typ
K6T4008C1B-L
K6T4008C1B-B
K6T4008C1B-P
K6T4008C1B-F
5.0
IL,
0
-
-
V
IN
Min
=V
-
-
IH
Read
Write
or V
Vcc+0.5
IL
Max
5.5
0.8
0
Min
2.4
-1
-1
CMOS SRAM
-
-
-
-
-
-
-
-
-
-
Max
10
8
2)
Typ
7.5
27
65
4
2
1
2
1
-
-
-
-
-
September 1998
Max
Revision 3.0
100
100
0.4
15
10
40
80
20
50
1
1
3
Unit
-
Unit
V
V
V
V
pF
pF
Unit
mA
mA
mA
mA
V
V
A
A
A
A
A
A