K7R641882M Samsung semiconductor, K7R641882M Datasheet - Page 11

• Manufacturer Part Number: K7R641882M
• Description: 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
• Manufacturer: Samsung semiconductor

AC ELECTRICAL CHARACTERISTICS
Notes: 1. This condition is for AC function test only, not for AC parameter test.
AC TIMING CHARACTERISTICS
Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges.
K7R643682M
K7R641882M
K7R640982M
Clock
Clock Cycle Time (K, K, C, C)
Clock Phase Jitter (K, K, C, C)
Clock High Time (K, K, C, C)
Clock Low Time (K, K, C, C)
Clock to Clock (K
Clock to data clock (K
DLL Lock Time (K, C)
K Static to DLL reset
Output Times
C, C High to Output Valid
C, C High to Output Hold
C, C High to Echo Clock Valid
C, C High to Echo Clock Hold
CQ, CQ High to Output Valid
CQ, CQ High to Output Hold
C, High to Output High-Z
C, High to Output Low-Z
Setup Times
Address valid to K rising edge
Control inputs valid to K rising edge
Data-in valid to K, K rising edge
Hold Times
K rising edge to address hold
K rising edge to control inputs hold
K, K rising edge to data-in hold
Input High Voltage
Input Low Voltage
2. Control singles are R, W,BW
3. If C,C are tied high, K,K become the references for C,C timing parameters.
4. To avoid bus contention, at a given voltage and temperature tCHQX
5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable.
7. Echo clock is very tightly controlled to data valid/data hold. By design, there is a
2. To maintain a valid level, the transitioning edge of the input must :
a) Sustain a constant slew rate from the current AC level through the target AC level, V
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, V
The specs as shown do not imply bus contention because tCHQX
(0 C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70 C, 1.7V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
The data sheet parameters reflect tester guardbands and test setup variations.
PARAMETER
PARAMETER
K , C
C , K
0
,BW
C )
C )
1
and BW
SYMBOL
t
t
t
t
t
t
t
t
KC reset
t
t
CHCQV
CHCQX
CQHQV
CQHQX
t
t
t
KC lock
t
CHQX1
t
t
t
t
t
t
t
t
KC var
CHQV
CHQX
KHKH
KHKH
KHCH
CHQZ
DVKH
KHAX
KHDX
KHKL
KLKH
AVKH
IVKH
KHIX
(V
2
, BW
DD
=1.8V 0.1V, T
2Mx36 & 4Mx18 & 8Mx9 QDR
3
, also for x36
SYMBOL
V
V
1024
-0.45
-0.45
-0.30
-0.45
4.00
1.60
1.60
1.80
0.00
0.35
0.35
0.35
0.35
0.35
0.35
MIN
IH
IL
30
(V
(AC)
(AC)
DD
-25
=1.8V 0.1V, T
- 11 -
MAX
1
6.30
0.20
1.80
0.45
0.45
0.30
0.45
is a MIN parameter that is worst case at totally different test conditions
1
A
is bigger than tCHQZ.
=0 C to +70 C)
1024
-0.45
-0.45
-0.35
-0.45
5.00
2.00
2.00
2.20
0.00
0.40
0.40
0.40
0.40
0.40
0.40
MIN
V
30
REF
A
=0 C to +70 C)
MIN
-
-20
+ 0.2
ns variation from echo clock to data.
IL(AC)
IL(DC)
MAX
7.88
0.20
2.30
0.45
0.45
0.35
0.45
or V
or V
IH(AC)
IH(DC)
V
REF
1024
-0.50
-0.50
-0.40
-0.50
6.00
2.40
2.40
2.70
0.00
0.50
0.50
0.50
0.50
0.50
0.50
MIN
MAX
30
-
- 0.2
-16
TM
MAX
8.40
0.20
2.80
0.50
0.50
0.40
0.50
Preliminary
UNIT
II b2 SRAM
V
V
UNITS NOTES
cycle
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
Oct. 2004
1,2
1,2
Rev 0.5
5
6
3
3
7
7
3
3
2