AR629AU9 National Semiconductor, AR629AU9 Datasheet - Page 15

• Manufacturer Part Number: AR629AU9
• Description: Gate Array
• Manufacturer: National Semiconductor

MNAR629A-X REV 0A0
(Continued)
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10: These parameters are measured at 2.0V on the rising and falling edges of a high pulse
Note 11: Same as NSC symbol TWTXOH and TWTXOL.
Note 12: TWH is measured from 0.75Vdd on the clock rising edge and 0.75Vdd -1.0V on the clock
Tested during initial qual only and after process/design changes; tested at 25 C
only.
TTL input only.
All output leakage current is measured at tri-state.
Same as NSC symbol TDAE.
Same as NSC symbol TDBUSQRIVS.
Same as NSC symbol TDRIVSRIVS.
Same as NSC symbol TDES.
Same as NSC symbol TDSE.
Same as NSC symbol TWTXO.
and extrapolated to 0.8V on the rising and falling edges of a low pulse.
falling edge.
rising edge.
1.0V/nS.
The clock used to measure these parameters has a minimum slew rate of
TWL is measured from 1V on the clock falling edge and 2V on the clock
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MICROCIRCUIT DATA SHEET