HYS64V8000GU Siemens, HYS64V8000GU Datasheet - Page 6
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HYS64V8000GU
Manufacturer Part Number
HYS64V8000GU
Description
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module
Manufacturer
Siemens
Datasheet
1.HYS64V8000GU.pdf
(11 pages)
Operating Currents (T
(Recommended Operating Conditions unless otherwise noted)
Notes:
7. These parameters depend on the cycle rate and these values are measured by the cycle rate under the
.......minimum value of tck and trc. Input signals are changed one time during tck.
8. These parameter depend on output loading. Specified values are obtained with output open.
Semiconductor Group
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Active-precharge command cycling,
without burst operation
PRECHARGE STANDBY
CURRENT in Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
PRECHARGE STANDBY
CURRENT in Non-Power Down
Mode
CS = VIH (min.), CKE>=Vih(min)
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
BURST OPERATING CURRENT
tck = min.,
Read/Write command cycling
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
Parameter & Test Condition
A
= 0 to 70
o
C, VCC = 3.3V
1 bank operation
tck = min.
tck = Infinity
tck = min.
tck = Infinity
CKE>=VIh(min.)
CKE<=VIl(max.)
(Power down mode)
6
0.3V
ICC2PS
Symb.
ICC2P
ICC3P
ICC2S
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
8M x 64/72 SDRAM-Module
1240
1040
HYS64(72)V8000GU-10
x64
880
400
560
24
16
40
64
16
max.
1395
1170
x72
990
450
630
27
18
45
72
18
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
7,8
7
7
7
7