HYS64V1000GS-10 Siemens, HYS64V1000GS-10 Datasheet - Page 6

• Manufacturer Part Number: HYS64V1000GS-10
• Description: 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module
• Manufacturer: Siemens

DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQ is disabled, 0 V <
Standby and Refresh Currents (T
Semiconductor Group
power
Down Mode
power Down Mode
Operating Current
Parameter
Precharged Standby
Current in Power
Down Mode
Precharged Standby
Current in Non-
Down Mode
Active Standby
Current in Power
Active Standby
Current in Non-
Refresh Current
Self Refresh Current
A
= 0 to 70 C;
V
IN
< 3.6 V, all other inputs = 0 V)
V
SS
= 0 V;
I
OUT
I
OUT
V
Symbol
OUT
Icc1NS
Icc2NS
= 2.0 mA)
Icc1PS
Icc2PS
Icc1N
Icc2N
Icc1P
Icc2P
= – 2.0 mA)
Icc3
Icc4
Icc5
V
DD,
V
V
CC
DDQ
)
CKE=<VIL(max), tCK=15ns
CKE=<VIL(max),
tCK=Infinity
CKE=>VIH(min), tCK=15ns
Input Change in every 30ns
CKE=>VIH(min),
tCK=Infinity
No Input Change
CKE=<VIL(max), tCK=15ns
CKE=<VIL(max),
tCK=Infinity
CKE=>VIH(min), tCK=15ns
Input Change in every 30ns
CKE=>VIH(min),tCK=Infinity
No Input Change
tRC=>tRC(min)
CAS Latency = 3
CKE=<0,2V
tRC=tRC(min), tck>tck,min
Io = 0mA
CAS Latency=3,Burst = 4
a
= 3.3 V
= 0 to 70
Test Condition
0.3 V
o
C, VCC = 3.3V
6
Symbol
V
V
V
V
I
I
HYS64(72)V1000GS-10/-12/-15
I(L)
O(L)
IH
IL
OH
OL
1M x 64/72 SDRAM-Module
0.3V)
Speed
Sort
-10
-12
-15
-10
-12
-15
min.
2.0
– 0.5
2.4
–
– 10
– 10
Limit Values
X64
500
440
360
560
500
400
12
48
24
12
64
40
8
8
8
max.
Vcc+0.3
0.8
–
0.4
10
10
X72
625
550
450
700
625
500
15
10
60
30
15
10
80
50
10
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Unit
V
V
V
V
Note
A
A