M470T2953Bxx Samsung semiconductor, M470T2953Bxx Datasheet - Page 13

• Manufacturer Part Number: M470T2953Bxx
• Description: 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
• Manufacturer: Samsung semiconductor

Electrical Characteristics & AC Timing for DDR2-533/400 SDRAM
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
256MB, 512MB, 1GB Unbuffered SODIMMs
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
(0 °C < T
Parameter
Speed
CASE
< 95 °C; V
DDQ
= 1.8V + 0.1V; V
tRFC
tREFI
3.75
min
15
15
55
40
5
-
DDR2-533(D5)
DD
85 °C < T
4 - 4 - 4
0 °C ≤ T
= 1.8V + 0.1V)
Symbol
CASE
CASE
70000
max
≤ 85°C
8
8
-
≤ 95°C
256Mb
7.8
3.9
75
min
15
15
55
40
5
5
-
512Mb
DDR2-400(CC)
105
7.8
3.9
3 - 3 - 3
127.5
1Gb
7.8
3.9
Rev. 1.5 Aug. 2005
70000
max
8
8
-
DDR2 SDRAM
2Gb
195
7.8
3.9
4Gb
tbd
7.8
3.9
Units
ns
ns
ns
ns
ns
ns
ns
Units
ns
µs
µs