M470L1624FT0 Samsung semiconductor, M470L1624FT0 Datasheet - Page 12

• Manufacturer Part Number: M470L1624FT0
• Description: DDR SDRAM SODIMM
• Manufacturer: Samsung semiconductor

128MB, 256MB SODIMM
AC Timming Parameters & Specifications
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active delay
Write recovery time
Last data in to Read command
Col. address to Col. address delay
Clock cycle time
Clock high level width
Clock low level width
DQS-out access time from CK/CK
Output data access time from CK/CK
Data strobe edge to ouput data edge
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
DQS-in hold time
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
DQS-in high level width
DQS-in low level width
DQS-in cycle time
Address and Control Input setup time(fast)
Address and Control Input hold time(fast)
Address and Control Input setup time(slow)
Address and Control Input hold time(slow)
Data-out high impedence time from CK/CK
Data-out low impedence time from CK/CK
Parameter
CL=2.0
CL=2.5
tDQSCK
tWPRES
Symbol
tWPRE
tDQSQ
tDQSS
tDQSH
tRPRE
tDQSL
tRPST
tWTR
tRCD
tRRD
tCCD
tDSH
tDSC
tRFC
tRAS
tDSS
tWR
tRC
tRP
tCK
tCH
tAC
tCL
tHZ
tLZ
tIS
tIH
tIS
tIH
(DDR333@CL=2.5))
Min
0.45
0.45
0.75
0.25
0.35
0.35
0.75
0.75
-0.6
-0.7
-0.7
7.5
0.9
0.4
0.2
0.2
0.9
0.8
0.8
60
72
42
18
18
12
15
1
1
6
0
-
B3
Max
+0.7
0.55
0.55
+0.6
0.45
1.25
+0.7
+0.7
70K
1.1
1.1
0.6
12
12
(DDR266@CL=2.0)
-0.75
-0.75
-0.75
Min
0.45
0.45
0.75
0.25
0.35
0.35
7.5
7.5
0.9
0.4
0.2
0.2
0.9
0.9
0.9
1.0
1.0
65
75
45
20
20
15
15
1
1
0
-
A2
+0.75
+0.75
120K
+0.75
+0.75
Max
0.55
0.55
1.25
0.5
1.1
0.6
1.1
12
12
(DDR266@CL=2.5))
-0.75
-0.75
-0.75
Min
0.45
0.45
0.75
0.25
0.35
0.35
Rev. 1.2 March 2004
7.5
0.9
0.2
0.2
0.9
0.9
0.9
1.0
1.0
0.4
65
75
45
20
20
15
15
10
1
1
0
-
B0
DDR SDRAM
+0.75
+0.75
120K
Max
+0.75
+0.75
0.55
0.55
1.25
0.5
1.1
0.6
1.1
12
12
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
i,5.7~9
i,5.7~9
i, 6~9
i, 6~9
Note
12
3
1
1