M368L3223ETN Samsung, M368L3223ETN Datasheet - Page 11

• Manufacturer Part Number: M368L3223ETN
• Description: DDR SDRAM Unbuffered Module
• Manufacturer: Samsung

DDR SDRAM IDD spec table
M368L6423ETN [ (32M x 8) * 16, 512MB Non ECC Module ]
M381L6423ETM [ (32M x 8) * 18, 512MB ECC Module ]
256MB, 512MB Unbuffered DIMM
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
IDD6
IDD6
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit
B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2 (DDR266@CL=2) B0(DDR266@CL=2.5) Unit
1,160
1,360
1,720
1,720
1,800
2,680
1,310
1,530
1,940
1,940
2,030
3,020
400
320
560
880
450
360
630
990
48
48
24
54
54
27
1,160
1,360
1,480
1,440
1,640
2,680
1,310
1,530
1,670
1,620
1,850
3,020
320
290
480
720
360
330
540
810
48
48
24
54
54
27
1,000
1,200
1,480
1,440
1,640
2,360
1,130
1,350
1,670
1,620
1,850
2,660
320
290
480
720
360
330
540
810
48
48
24
54
54
27
Rev. 1.1 August. 2003
1,000
1,200
1,480
1,440
1,640
2,360
1,130
1,350
1,670
1,620
1,850
2,660
320
290
480
720
360
330
540
810
48
48
24
54
54
27
DDR SDRAM
(V
(V
DD
DD
=2.7V, T = 10°C)
=2.7V, T = 10°C)
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
Optional
Notes
Notes