K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 39
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K9F1208Q0A-XXB0
Manufacturer Part Number
K9F1208Q0A-XXB0
Description
512Mb/256Mb 1.8V NAND Flash Errata
Manufacturer
Samsung semiconductor
Datasheet
1.K9F1208Q0A-XXB0.pdf
(39 pages)
- Current page: 39 of 39
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K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides
additional software protection.
Figure 18. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
IL
during power-up and power-down and recovery time of minimum 10 s is required before internal
10 s
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
High
38
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
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