K9F1208D0B-D Samsung semiconductor, K9F1208D0B-D Datasheet - Page 32

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K9F1208D0B-D

Manufacturer Part Number
K9F1208D0B-D
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Figure 7. Read1 Operation
NOTE: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
CLE
CE
WE
ALE
R/B
RE
I/O
0
~
7
array (00h) at next cycle.
00h
Start Add.(4Cycle)
A
0
01h command is only available on X8 device(K9F1208X0B).
~ A
7
& A
9
~ A
25
(00h Command)
Data Field
Main array
t
R
32
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
Spare Field
1)
Data Output(Sequential)
1st half array
FLASH MEMORY
(01h Command)
Data Field
2st half array
Advance
Spare Field

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