K4S161622H-TC55 Samsung semiconductor, K4S161622H-TC55 Datasheet - Page 7

• Manufacturer Part Number: K4S161622H-TC55
• Description: 16Mb H-die SDRAM Specification
• Manufacturer: Samsung semiconductor

SDRAM 16Mb H-die(x16)
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Note :
CAPACITANCE
:
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high votlage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
RAS, CAS, WE, CS, CKE, L(U)DQM
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
DD
Parameter
supply relative to Vss
DQ
Address
Clock
0
Pin
~ DQ
(V
DD
IN
15
≤ V
= 3.3V, T
DDQ
.
A
V
= 23°C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
DD
Symbol
IN
T
C
C
C
, V
I
C
, V
P
STG
OS
Min
-0.3
ADD
OUT
CLK
-10
3.0
2.0
2.4
D
IN
-
REF
OUT
DDQ
SS
= 0V, T
=1.4V ± 200 mV)
A
= 0 to 70°C)
Typ
3.3
3.0
0
-
-
-
Min
2
2
2
3
V
-55 ~ +150
-1.0 ~ 4.6
-1.0 ~ 4.6
DDQ
Max
Value
3.6
0.8
0.4
10
-
50
1
+0.3
Rev. 1.5 August 2004
Max
4
4
4
5
Unit
uA
CMOS SDRAM
V
V
V
V
V
I
I
Unit
OH
OL
mA
°C
W
V
V
Unit
Note
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3