K4S161622D-TI/E10 Samsung semiconductor, K4S161622D-TI/E10 Datasheet - Page 6

• Manufacturer Part Number: K4S161622D-TI/E10
• Description: 1M x 16 SDRAM
• Manufacturer: Samsung semiconductor

K4S161622D-TI/E
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, Extended T
Note :
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
1. Unless otherwise notes, Input level is CMOS(V
2. Measured with outputs open. Addresses are changed only one time during tcc(min).
3. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
Parameter
I
I
I
I
I
I
I
I
I
I
I
I
Symbol
CC1
CC2
CC2
CC2
CC2
CC3
CC3
CC3
CC3
CC4
CC5
CC6
P
PS
N
NS
P
PS
N
NS
Burst Length =1
t
I
CKE≤V
CKE & CLK≤V
CKE≥V
Input signals are changed one time during
30ns
CKE≥V
Input signals are stable
CKE≤V
CKE & CLK≤V
CKE≥V
Input signals are changed one time during
30ns
CKE≥V
Input signals are stable
I
Page Burst 2Banks Activated
t
t
CKE≤0.2V
RC
o
o
CCD
RC
= 0 mA
= 0 mA
≥t
≥t
RC
RC
= 2CLKs
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS≥V
(min), CLK≤V
(min), CS≥V
(min), CLK≤V
Test Condition
IL
IL
(max), t
(max), t
IH
CC
CC
/V
= 15ns
= 15ns
IL
IH
IH
=V
IL
IL
(min), t
(min), t
CC
CC
(max), t
(max), t
DDQ
= ∞
= ∞
/V
CC
CC
SSQ
A
CC
CC
= -25 to +85°C , Industrial T
= 15ns
= 15ns
= ∞
= ∞
) in LVTTL.
Latency
CAS
3
2
3
2
3
2
125 120 115 105
160 155 150 140 130 115
110 105 100
-50
-
-
-
-55
-
-
-
-60 -70 -80
Version
A
-
-
-
= -40 to +85°C)
15
25
15
2
2
5
3
3
1
115 115 100
95
90
90
CMOS SDRAM
Rev 1.2 Jan '03
95
95
90
90
-10
85
80
80
80
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
2
2
3