K4S161622D-TC/L10 Samsung semiconductor, K4S161622D-TC/L10 Datasheet - Page 16

Manufacturer Part Number

K4S161622D-TC/L10

Description

512K x 16Bit x 2 Banks Synchronous DRAM

Manufacturer

Samsung semiconductor

Datasheet

1.K4S161622D-TCL10.pdf (41 pages)

K4S161622D

CMOS SDRAM

5. Write Interrupted by Precharge & DQM

CLK

Note 3

PRE

CMD

Note 2

DQM

Masked by DQM

*Note : 2. To inhibit invalid write, DQM should be issued.

3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge

interrupt but only the other bank precharge of dual banks operation.