M36LLR8760 ST Microelectronics, M36LLR8760 Datasheet - Page 17

• Manufacturer Part Number: M36LLR8760
• Description: 256 + 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
• Manufacturer: ST Microelectronics

M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
PART NUMBERING
Table 11. Ordering Information Scheme
Example:
M36 L L
R 8
7 6 0 T 1 ZAQ T
Device Type
M36 = Multi-Chip Package (Multiple Flash + RAM)
Flash 1 Architecture
L = Multi-Level, Multiple Bank, Burst mode
Flash 2 Architecture
L = Multi-Level, Multiple Bank, Burst mode
Operating Voltage
R = V
= V
= V
= 1.7 to 1.95V
DDF
CCP
DDQF
Flash 1 Density
8 = 256 Mbits
Flash 2 Density
7 = 128 Mbits
RAM 1 Density
6 = 64 Mbits
RAM 0 Density
0 = No Die
Parameter Blocks Location
T = Top Boot Block Flash
B = Bottom Boot Block Flash
D = Mixed (Flash 1 Bottom, Flash 2 Top)
M = Mixed (Flash 1 Top, Flash 2 Bottom)
Product Version
1 = 0.13µm Flash technology (2 Chip Enable inputs, one for each Flash memory), 85ns speed;
0.11µm PSRAM, 70ns speed, burst mode
Package
ZAQ = Stacked LFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-free and RoHS Standard packing
F = Lead-free and RoHS Tape & Reel packing
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available op-
tions (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST-
Microelectronics Sales Office nearest to you.
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