AM29F080B Advanced Micro Devices, AM29F080B Datasheet - Page 33

• Manufacturer Part Number: AM29F080B
• Description: 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
• Manufacturer: Advanced Micro Devices

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 5.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for programming. See Table 5 for further
6. The device has a typical erase and program cycle endurance of 1,000,000 cycles. 1,000,000 cycles are guaranteed.
LATCHUP CHARACTERISTIC
Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Input Voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
Parameter
CC
Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
information on command definitions.
C
C
C
Current
OUT
IN2
IN
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
A
= 25 C, f = 1.0 MHz.
Parameter Description
CC
. Test conditions: V
SS
on I/O pins
Typ (Note 1)
CC
7.2
16
= 4.5 V (4.75 for -75), 1,000,000 cycles.
1
7
CC
P R E L I M I N A R Y
= 5.0 Volt, one pin at a time.
Am29F080B
V
V
V
IN
OUT
IN
Max (Note 2)
= 0
= 0
= 0
21.6
128
300
8
Test Conditions
Test Conditions
150 C
125 C
Unit
sec
sec
sec
µs
CC
, 1,000,000 cycles. Additionally,
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
–100 mA
–1.0 V
Min
Min
10
20
Comments
Min
8.5
7.5
6
V
CC
+100 mA
Max
7.5
12
9
Max
Years
Years
+ 1.0 V
Unit
Unit
pF
pF
pF
33