AM29F010B ETC, AM29F010B Datasheet - Page 29

• Manufacturer Part Number: AM29F010B
• Description: 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
• Manufacturer: ETC

AC CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 5.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4
6. The device has a minimum guaranteed erase cycle endurance of 1 million cycles.
28
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, D
2. Figure indicates the last two bus cycles of the command sequence.
Chip/Sector Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
for further information on command definitions.
Addresses
Parameter
WE#
Data
OE#
CE#
Figure 13. Alternate CE# Controlled Write Operation Timings
555 for program
2AA for erase
t
t
t
WS
WH
WC
Typ (Note 1)
A0 for program
55 for erase
t
CC
GHEL
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
= 4.5 V (4.75 V for -45), 100,000 cycles.
t
1.0
0.9
AS
t
7
DH
t
AH
Am29F010B
PD for program
30 for sector erase
10 for chip erase
Limits
Max (Note 2)
t
6.25
300
WHWH1 or 2
15
Data# Polling
Unit
sec
sec
µs
CC
, 1 million cycles. Additionally,
DQ7#
PA
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
D
OUT
Comments
November 18, 2002
OUT
= Array Data.