AM28F020 Advanced Micro Devices, AM28F020 Datasheet - Page 2

• Manufacturer Part Number: AM28F020
• Description: 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
• Manufacturer: Advanced Micro Devices

addresses and data needed for the programming and
erase operations. For system design simplification, the
Am28F020 is designed to support either WE# or CE#
controlled w rites. During a system write cycle,
addresses are latched on the falling edge of WE# or
CE#, whichever occurs last. Data is latched on the rising
edge of WE# or CE#, whichever occurs first. To simplify
discussion, the WE# pin is used as the write cycle
PRODUCT SELECTOR GUIDE
BLOCK DIAGRAM
2
Family Part Number
Speed Options (V
Max Access Time (ns)
CE
OE
#
#
(E
(G
#
#
) Access (ns)
) Access (ns)
A0–A17
V
WE#
V
OE#
V
CE#
CC
CC
SS
PP
= 5.0 V
Low V
Detector
Command
10%)
Register
CC
Control
State
Program/Erase
Pulse Timer
Program
Voltage
Switch
Am28F020
-70
70
70
35
Voltage
Switch
Erase
control pin throughout the rest of this data sheet. All
setup and hold times are with respect to the WE# signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F020 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are pro-
grammed one byte at a time using the EPROM
programming mechanism of hot electron injection.
Output Enable
To Array
Chip Enable
-90
90
90
35
Logic
Y-Decoder
X-Decoder
Am28F020
-120
120
120
50
Input/Output
DQ0–DQ7
Buffers
Data Latch
Cell Matrix
2,097,152
Y-Gating
-150
150
150
55
Bit
14727F-1
-200
200
200
55