AM28F010A-120FCB Advanced Micro Devices, AM28F010A-120FCB Datasheet - Page 16

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AM28F010A-120FCB

Manufacturer Part Number
AM28F010A-120FCB
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
Manufacturer
Advanced Micro Devices
Datasheet
Toggle Bit—DQ6
The device also features a “Toggle Bit” as a method to
indicate to the host system that the Embedded algo-
rithms are either in progress or completed.
Successive attempts to read data from the device at a
valid address, while the Embedded Program algorithm
is in progress, or at any address while the Embedded
Erase algorithm is in progress, will result in DQ6 tog-
gling between one and zero. Once the Embedded Pro-
gram or Erase algorithm is completed, DQ6 will stop
16
Note:
DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5 changing to “1”.
No
Figure 5. Toggle Bit Algorithm
DQ6 = Toggle
DQ6 = Toggle
(DQ0–DQ7)
(DQ0–DQ7)
Read Byte
Read Byte
Addr = VA
Addr = VA
DQ5 = 1
START
Fail
?
?
?
Am28F010A
Yes
Yes
Yes
No
No
toggling to indicate the completion of either Embedded
operation. Only on the next read cycle will valid data be
obtained. The toggle bit is valid after the rising edge of
the first WE# pulse of the two write pulse sequence, un-
like Data# Polling which is valid after the rising edge of
the second WE# pulse. This feature allows the user to
determine if the device is partially through the two write
pulse sequence.
See Figures 5 and 6 for the Toggle Bit timing specifica-
tions and diagrams.
Pass
VA = Byte address for programming
= XXXXh during chip erase
16778D-10

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