BS62LV256 Brilliance Semiconductor, BS62LV256 Datasheet - Page 3

• Manufacturer Part Number: BS62LV256
• Description: Very Low Power/Voltage CMOS SRAM 32K X 8 bit
• Manufacturer: Brilliance Semiconductor

R0201-BS62LV256
1. Typical characteristics are at TA = 25
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
PARAMETER
DATA RETENTION CHARACTERISTICS
LOW V
DC ELECTRICAL CHARACTERISTICS
1. Vcc = 1.5V, T
2. t
Vcc
CE
SYMBOL
NAME
I
RC
I
CCSB1
I
V
CCSB
t
V
V
CCDR
V
I
V
I
CDR
I
t
OL
CC
OH
DR
IL
OL
R
IH
= Read Cycle Time
IL
CC
BSI
DATA RETENTION WAVEFORM
RC
.
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
A
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
Standby Current-CMOS
= + 25
PARAMETER
PARAMETER
O
(2)
(2)
C
o
C.
V
IH
t
Vcc
CDR
Vcc = Max, V
Vcc = Max, CE = V
V
Vcc = Max, I
Vcc = Min, I
CE = V
CE = V
CE
V
I/O
IN
CE
V
CE
V
See Retention Waveform
= 0V to Vcc
IN
IN
( CE Controlled )
( TA =0
( TA = 0
Vcc - 0.2V or V
IL
IH
Vcc-0.2V,
, I
, I
TEST CONDITIONS
TEST CONDITIONS
Vcc - 0.2V or V
Vcc - 0.2V or V
Vcc - 0.2V
Vcc -0.2V
DQ
DQ
OH
OL
= 0mA, F = Fmax
= 0mA
IN
o
= -1mA
C to + 70
= 2mA
= 0V to Vcc
o
Data Retention Mode
3
C to + 70
CE
IH
, or OE = V
V
≥
DR
IN
Vcc - 0.2V
≥
IN
IN
o
1.5V
C)
o
0.2V
C )
(3)
0.2V
0.2V
IH
,
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
MIN.
T
Vcc
1.5
RC
--
0
t
-0.5
(2)
2.0
2.2
2.4
R
--
--
--
--
--
--
--
--
--
MIN. TYP.
V
IH
TYP.
0.01
--
--
--
0.01
0.4
BS62LV256
(1)
--
--
--
--
--
--
--
--
--
--
(1)
MAX.
0.20
--
--
--
MAX.
Vcc+0.2
0.8
0.4
0.2
1.0
20
35
1
--
1
2
1
Revision 2.2
April 2001
UNITS
UNITS
uA
ns
ns
V
mA
mA
uA
uA
uA
V
V
V
V