HN58V65A Hitachi Semiconductor, HN58V65A Datasheet - Page 20

• Manufacturer Part Number: HN58V65A
• Description: 64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A)
• Manufacturer: Hitachi Semiconductor

HN58V65A Series, HN58V66A Series
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the
rising edge of WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 10
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device
is page-programmed less than 10
Data Protection
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake.
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is
15 ns or less.
Be careful not to allow noise of a width of more than 15 ns on the control pins.
5
cycles in case of the page programming and 10
WE
CE
OE
4
cycles.
15 ns max
V
0 V
V
0 V
IH
IH
4
cycles in case of the byte