TP2635N3 Supertex Inc, TP2635N3 Datasheet

TP2635N3

Manufacturer Part Number

TP2635N3

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TP2635N3.pdf (4 pages)

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Ordering Information

†

Features

❏ Low threshold — -2.0V max.

❏ High input impedance

❏ Low input capacitance

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Applications

❏

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

MIL visual screening available.

Distance of 1.6 mm from case for 10 seconds.

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

-350V

-400V

DSS

DGS

(max)

15Ω

DS(ON)

(max)

-2.0V

GS(th)

-55°C to +150°C

P-Channel Enhancement-Mode

Vertical DMOS FETs

300°C

± 20V

DGS

DSS

(min)

-0.7A

D(ON)

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Package Options

Note: See Package Outline section for dimensions.

TP2640LG

SO-8

–

Order Number / Package

TP2635N3

TP2640N3

TO-92

top view

TO-92

SO-8

S G D

Low Threshold

TP2640ND

Die

—

TP2635

TP2640

†

Related parts for TP2635N3

TP2635N3 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 TP2635 TP2640 Low Threshold Order Number / Package TO-92 Die – TP2635N3 — TP2640N3 TP2640ND TO- ...

Page 2

Thermal Characteristics Package I (continuous)* D SO-8 -210mA TO-92 -180mA * I (continuous) is limited by max rated † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown ...

Page 3

Typical Performance Curves Output Characteristics -2.0 -1.6 -1.2 -0.8 -0 -10 -30 -20 V (volts) DS Transconductance vs. Drain Current 1.0 0 -25V DS 0.6 0.4 0.2 125° -0.4 -0.8 -1.2 I (amperes) D ...

Page 4

... Transfer Characteristics -2.0 -1.6 -1.2 -0.8 -0 (volts) GS Capacitance vs. Drain-to-Source Voltage 400 f = 1MHz 300 200 100 0 0 -10 -20 V (volts) DS ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited 100 150 0 V 1.2 1.0 0.8 0.6 0.4 -8 -10 -50 - ISS - RSS ...

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