ZVN2535 Zetex Semiconductors, ZVN2535 Datasheet
ZVN2535
Manufacturer Part Number
ZVN2535
Description
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Manufacturer
Zetex Semiconductors
Datasheet
1.ZVN2535.pdf
(3 pages)
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
Measured under pulsed conditions. Width=300 s. Duty cycle 2%
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(
2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
350 Volt V
R
DS(on)
=35
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
=25°C
fs
GS(th)
DS(on)
iss
oss
rss
DSS
350
1
250
100
3-372
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
20
10
400
35
70
10
4
7
7
16
10
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
T=125°C
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=350V, V
=280V, V
=25V, V
=10V,I
=25V,I
=25 V, V
VALUE
25V, I
350
700
90
ZVN2535A
1
20
(2)
TO92 Compatible
D
D
GS
DS
=100mA
=100mA
GS
D
D
GS
GS
GS
=0V
=100mA
G
= V
DS
=10V
S
=0V, f=1MHz
E-Line
=0
=0V,
=0V
GS
UNIT
mW
mA
°C
A
V
V
(
1
)
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ZVN2535 Summary of contents
Page 1
... iss oss rss d(on d(off 3-372 ZVN2535A E-Line TO92 Compatible VALUE UNIT 350 700 mW -55 to +150 °C I =1mA ID=1mA 20V ...
Page 2
... Transfer Characteristics 250 200 150 100 C iss 50 C oss C rss Transconductance v drain current 3-373 ZVN2535A Gate Source Voltage (Volts) GS- 100 200 300 400 I - Drain Current (mA ...
Page 3
... ZVN2535A TYPICAL CHARACTERISTICS 250 200 150 100 -Gate Source Voltage (Volts) GS Transconductance v gate-source voltage V =3V GS 100 100 I Drain Current (mA) D- On-resistance v drain current Gate charge v gate-source voltage ...