2N6452 InterFET Corporation, 2N6452 Datasheet
2N6452
Manufacturer Part Number
2N6452
Description
N-Channel Silicon Junction Field-Effect Transistor
Manufacturer
InterFET Corporation
Datasheet
1.2N6452.pdf
(1 pages)
01/99
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TOÐ72 Package
Dimensions in Inches (mm)
www.interfet.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
Amplifiers
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
¯ e
V
I
V
I
| Y
| Y
C
C
NF
GSS
DSS
N
(BR)GSS
GS(OFF)
iss
rss
fs
os
|
|
N-Channel Silicon Junction Field-Effect Transistor
– 0.5 – 3.5 – 0.5 – 3.5
– 20
Min
15
5
2N6451
Absolute maximum ratings at T
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 0.1
– 0.2
Max
1.5
20
30
50
25
5
5
3
– 25
Min
15
5
2N6452
– 0.5
Max Unit
– 1
2.5
20
30
50
25
10
5
8
nV/√Hz
nV/√Hz
mA
mS
mS
nA
nA
µA
µA
µS
µS
dB
pF
pF
pF
pF
V
V
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
R
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
G
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
G
= – 1 µA, V
= 10 kΩ
= – 10V, V
= – 15V, V
= – 10V, V
= – 15V, V
= 10V, I
= 10V, V
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
A
Process NJ132L
= 25¡C
D
D
D
D
D
D
D
D
D
D
D
D
GS
DS
2.88 mW/°C 2.88 mW/°C
= 0.5 nA
= 5 mA
= 15 mA
= 5 mA
= 15 mA
= 5 mA
= 15 mA
= 5 mA
= 15 mA
= 5 mA
= 5 mA
= 5 mA
DS
DS
DS
DS
= ØV
Test Conditions
= ØV
360 mW
2N6451, 2N6452
2N6451
= ØV
= ØV
= ØV
= ØV
FAX
10 mA
– 20 V
– 20 V
(972) 276-3375
360 mW
2N6452
– 25 V
– 25 V
10 mA
T
T
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 10 Hz
A
A
= 125°C
= 125°C
B-25
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