HV51V7403HGL-5 Hynix Semiconductor, HV51V7403HGL-5 Datasheet - Page 6

• Manufacturer Part Number: HV51V7403HGL-5
• Description: 4M x 4Bit EDO DRAM
• Manufacturer: Hynix Semiconductor

Rev.0.1/Apr.01
Read Cycle
Read command hold time from /RAS
Output buffer turn-off time to /RAS
Column address to /RAS lead time
Column address to /CAS lead time
Read command hold time to /CAS
Read command hold time to /RAS
Access time from column address
Output buffer turn off time to /WE
Output buffer turn off time to /OE
Output data hold time from /RAS
Output data hold time from /OE
Transition time ( Rise and Fall)
Read command set-up time
Refresh period (L-version)
Output buffer turn off time
/CAS delay time from Din
/OE delay time from Din
Access time from /RAS
Access time from /CAS
/CAS to output in low-Z
/RAS to DIN delay time
/CAS to Din delay time
/WE to DIN delay time
Access time from /OE
Output data hold time
/OE to Din delay time
Refresh period
Parameter
Parameter
Symbol
Symbol
t
tDZC
t
t
t
RCHR
t
tCAL
tOHO
t
t
t
t
t
t
t
tRCH
t
t
tCDD
tOFR
tRDD
t
tCLZ
WDD
ODD
DZO
RAC
CAC
tAA
OAC
RCS
RRH
t
OHR
WEZ
REF
OEZ
OFF
RAL
OH
t
T
Min
Min
13
50
25
15
13
13
13
0
0
2
0
0
5
0
3
3
3
-
-
-
-
-
-
-
-
-
-
-50
-50
Max
Max
128
50
32
50
13
25
13
13
13
13
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Min
15
60
30
18
15
15
15
0
0
2
0
0
5
0
3
3
3
-
-
-
-
-
-
-
-
-
-
HY51V(S)17403HG/HGL
-60
-60
Max
Max
128
50
32
60
15
30
15
15
15
15
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Min
18
70
35
23
18
18
18
0
0
2
0
0
5
0
3
3
3
-
-
-
-
-
-
-
-
-
-
-70
-70
Max
Max
128
50
32
70
18
35
18
15
15
15
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- continued -
Unit
Unit
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2K Ref.
2K Ref.
8,9,19
17,19
17,19
9,10,
9,11,
Note
Note
12
12
13
13
5
6
6
7
9
5
6