M40Z100WMH1TR ST Microelectronics, M40Z100WMH1TR Datasheet

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M40Z100WMH1TR

Manufacturer Part Number
M40Z100WMH1TR
Description
NVRAM CONTROLLER for up to TWO LPSRAM
Manufacturer
ST Microelectronics
Datasheet
DESCRIPTION
The M40Z111/111W NVRAM Controller is a self-
contained device which converts a standard low-
power SRAM into a non-volatile memory.
A precision voltage reference and comparator
monitors the V
dition.
Table 1. Signal Names
February 1999
THS
E
E
V
V
V
CONVERT LOW POWER SRAMs into
NVRAMs
PRECISION POWER MONITORING and
POWER SWITCHING CIRCUITRY
AUTOMATIC WRITE-PROTECTION when V
is OUT-OF-TOLERANCE
CHOICE of SUPPLY VOLTAGES and
POWER-FAIL DESELECT VOLTAGES:
– M40Z111:
– M40Z111W:
LESS THAN 15ns CHIP ENABLE ACCESS
PROPAGATION DELAY (for 5.0V device)
PACKAGING INCLUDES a 28-LEAD SOIC
and SNAPHAT
(to be Ordered Separately)
SOIC PACKAGE PROVIDES DIRECT
CONNECTION for a SNAPHAT TOP which
CONTAINS the BATTERY
CON
OUT
CC
SS
V
THS = V
THS = V
V
THS = V
V
THS = V
CC
CC
CC
= 4.5V to 5.5V
= 3.0V to 3.6V
= 2.7V to 3.3V
SS
OUT
SS
OUT
CC
Threshold Select Input
Chip Enable Input
Conditioned Chip Enable Output
Supply Voltage Output
Supply Voltage
Ground
®
4.5V
2.8V
input for an out-of-tolerance con-
4.2V
2.5
TOP
V
V
V
NVRAM CONTROLLER for up to TWO LPSRAM
V
PFD
PFD
PFD
PFD
2.7V
4.75V
3.0V
4.5V
CC
Figure 1. Logic Diagram
THS
E
28
SNAPHAT (SH)
SOH28 (MH)
V CC
M40Z111W
V SS
M40Z111
Battery
1
M40Z111W
M40Z111
V OUT
E CON
AI02238B
1/12

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M40Z100WMH1TR Summary of contents

Page 1

NVRAM CONTROLLER for up to TWO LPSRAM CONVERT LOW POWER SRAMs into NVRAMs PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION when V is OUT-OF-TOLERANCE CHOICE of SUPPLY VOLTAGES and POWER-FAIL DESELECT VOLTAGES: – M40Z111 4.5V to ...

Page 2

M40Z111, M40Z111W Table 2. Absolute Maximum Ratings Symbol T Ambient Operating Temperature A Storage Temperature (V T STG (2) T Lead Solder Temperature for 10 seconds SLD V Input or Output Voltages IO V Supply Voltage CC I Output Current ...

Page 3

Figure 3. Hardware Hookup 3. 1N5817 or 0.1 F MBR5120T3 Thereshold When V degrades during a power failure forced inactive independent this situation, the SRAM is unconditionally write protected as V falls below ...

Page 4

M40Z111, M40Z111W Table 3. AC Measurement Condition Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Note that Output Hi-Z is defined as the point where data is no longer driven. Manufacturers generally specify a ...

Page 5

Table 5A. DC Characteristics for M40Z111 ( 4.5V to 5.5V Symbol Parameter (1) I Input Leakage Current LI (1) I Output Leakage Current LO I Supply Current CC V Input Low ...

Page 6

M40Z111, M40Z111W Table 5B. DC Characteristics for M40Z111W ( 3.6V or 2.7V to 3.3V Symbol Parameter (1) I Input Leakage Current LI (1) I Output Leakage Current LO I ...

Page 7

Table 6. Power Down/Up AC Characteristics ( Symbol ( (max PFD PFD ( (min PFD (min PFD PFD ...

Page 8

M40Z111, M40Z111W Figure 6. Power Up Timing PFD (max) V PFD V PFD (min OHB E CON Table 7. Battery Table Part Number M4Z28-BR00SH1 M4Z32-BR00SH1 8/12 tR tER tEDH Description Lithium Battery (50mAh) ...

Page 9

ORDERING INFORMATION SCHEME Example: Supply Voltage and Write Protect Voltage 111 V = 4.5V to 5.5V CC THS = V 4.5V V 4.75V SS PFD THS = V 4.2V V OUT PFD 111W V = 3.0V to 3.6V CC THS ...

Page 10

M40Z111, M40Z111W SOH28 - 28 lead Plastic Small Outline, battery SNAPHAT Symb Typ 1. SOH-A Drawing is not to scale. 10/12 mm ...

Page 11

SH - SNAPHAT Housing for 28 lead Plastic Small Outline Symb Typ Drawing is not to scale. mm Min Max 9.78 6.73 7.24 6.48 6.99 0.38 0.46 0.56 21.21 21.84 ...

Page 12

M40Z111, M40Z111W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from ...

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