TC911B Microchip Technology, TC911B Datasheet - Page 2

• Manufacturer Part Number: TC911B
• Description: Monolithic Auto-Zeroed Operational Amplifers
• Manufacturer: Microchip Technology

TC911A
TC911/B
ABSOLUTE MAXIMUM RATINGS*
Total Supply Voltage (V
Input Voltage .......................... (V
Current into Any Pin ................................................. 10mA
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
Operating Temperature Range
ELECTRICAL CHARACTERISTICS:
Symbol Parameter
V
TCV
I
I
e
CMRR
CMVR
A
V
BW
SR
PSRR
V
I
NOTES: 1. Characterized; not 100% tested.
B
OS
S
N
OS
OL
OUT
S
While Operating ............................................... 100 A
C Device ................................................ 0 C to +70 C
OS
Input Offset Voltage
Average Temperature
Coefficient of Input
Offset Voltage
Average Input Bias
Current
Average Input
Offset Current
Input Voltage Noise
Common-Mode
Rejection Ratio
Common-Mode
Voltage Range
Open-Loop Voltage
Gain
Output Voltage Swing
Closed Loop
Bandwidth
Slew Rate
Power Supply
Rejection Ratio
Operating Supply
Voltage Range
Quiescent Supply
Current
DD
to V
SS
DD
) ........................... +18V
Test Conditions
T
0 C
–25 C
(Note 1)
T
0 C
–25 C
T
T
0.1 to 1 Hz, R
0. 1 to 10 Hz, R
V
R
R
Closed Loop Gain = +1
R
Split Supply
Single Supply
V
A
A
A
A
3.3V to 5.5V
SS
L
L
S
L
+0.3V) to (V
= +25 C
= +25 C
= +25 C
= +85 C
= 10 k , V
= 10 k
= 10 k , C
= 5V
T
T
V
A
A
CM
T
T
A
A
+70 C
+70 C
V
V
OUT
S
+85 C
+85 C
L
S
DD
S
= 50pF
SS
= 5V, T
100
= 4V
– 2.2
100
Monolithic Auto-Zeroed Operational Amplifers
–0.3V)
V
SS
A
Min
V
115
110
112
6.5
= +25 C, unless otherwise indicated.
—
—
—
—
—
—
—
—
—
—
—
—
—
3.3
2
+ 0.3
SS
*Static-sensitive device. Unused devices should be stored in conductive
material. Stresses above those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specifications is not
implied.
Package Power Dissipation (T
TC911A
Plastic DIP ...................................................... 730mW
Plastic SOIC ................................................... 470mW
Typ
0.05
0.05
0.65
116
120
350
1.5
2.5
11
—
—
—
—
—
—
—
—
—
5
5
V
V
DD
Max
DD
0.15
0.15
600
15
70
20
16
—
—
—
—
—
—
—
3
4
1
– 0.9
8
– 2
V
SS
Min
V
110
105
105
6.5
—
—
—
—
—
—
—
—
—
—
—
—
—
3.3
SS
+ 0.3
© 2001 Microchip Technology Inc.
A
TC911B
70 C)
Typ
0.65
110
120
0.1
0.1
1.5
2.5
15
10
11
—
—
—
—
—
—
—
—
—
—
V
V
DD
Max
0.25
0.25
120
DD
800
30
40
16
—
—
—
—
—
—
—
4
6
1
– 0.9
8
–2
DS21481A
V/ sec
Unit
MHz
V/ C
V/ C
V
V
dB
pA
nA
nA
pA
nA
dB
dB
V
V
V
V
V
P-P
P-P
A