HCS253D Intersil Corporation, HCS253D Datasheet

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HCS253D

Manufacturer Part Number
HCS253D
Description
Radiation Hardened Dual 4-Input Multiplexer
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS253MS is a Radiation Hardened 4-to-1 line
selector multiplexer having three-state outputs. One of four
sources for each section is selected by the common select inputs
S0 and S1. When the output enable (1OE or 2OE) is HIGH, the
output is in the high impedance state.
The HCS253MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS253MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS253DMSR
HCS253KMSR
HCS253D/Sample
HCS253K/Sample
HCS253HMSR
Day (Typ)
- Bus Driver Outputs - 15 LSTTL Loads
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
PART NUMBER
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/Bit-
1
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
SCREENING LEVEL
Pinouts
OE 1
GND
HCS253MS
I3 1
I2 1
I1 1
I0 1
Y 1
S1
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
FLATPACK PACKAGE (FLATPACK)
16 LEAD CERAMIC DUAL-IN-LINE
16 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
OE 1
GND
I3 1
I2 1
I1 1
I0 1
Y 1
S1
Dual 4-Input Multiplexer
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
Radiation Hardened
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
Spec Number
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
File Number
9
PACKAGE
2 OE
S0
2 I3
2 I2
2 I1
2 I0
2 Y
VCC
518765
3068.1
2 OE
S0
2 I3
2 I2
2 I1
2 I0
2 Y
VCC

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HCS253D Summary of contents

Page 1

... The HCS253MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCS253DMSR HCS253KMSR HCS253D/Sample HCS253K/Sample HCS253HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCS253MS Pinouts ...

Page 2

Functional Diagram 20E 2I3 2I2 20E 20E 16 VCC 8 GND p 20E SELECT INPUTS Select inputs ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Select to Output TPHL VCC = 4.5V TPLH Data to Output TPHL VCC = 4.5V TPLH VCC = 4.5V Enable to Output TPZH VCC = 4.5V TPZL VCC = 4.5V Disable to ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate group A inspection in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 Three-State Low Timing Diagrams VIH INPUT VS ...

Page 9

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Page 10

Die Characteristics DIE DIMENSIONS mils METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

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