TZA3013 Philips Semiconductors, TZA3013 Datasheet

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TZA3013

Manufacturer Part Number
TZA3013
Description
SDH/SONET STM16/OC48 transimpedance amplifier
Manufacturer
Philips Semiconductors
Datasheet

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Part Number:
TZA3013BU/N3
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AVAGO
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TZA3013BU/N3
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Product specification
Supersedes data of 2000 Jun 19
File under Integrated Circuits, IC19
DATA SHEET
TZA3013A; TZA3013B
SDH/SONET STM16/OC48
transimpedance amplifier
INTEGRATED CIRCUITS
2001 Feb 26

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TZA3013 Summary of contents

Page 1

... DATA SHEET TZA3013A; TZA3013B SDH/SONET STM16/OC48 transimpedance amplifier Product specification Supersedes data of 2000 Jun 19 File under Integrated Circuits, IC19 INTEGRATED CIRCUITS 2001 Feb 26 ...

Page 2

... Wide-band RF gain block. GENERAL DESCRIPTION The TZA3013 is a transimpedance amplifier with AGC, designed to be used in STM16/OC48 fibre-optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts differential output voltage ...

Page 3

... PILOT 4 12 GAIN PEAK CONTROL DETECTOR TZA3013BU low noise single-ended to amplifier differential converter SOURCE GNDA GNDD INQ Fig.2 Block diagram of TZA3013BU (bare die only). 3 Product specification TZA3013A; TZA3013B OUTSENSE 13 OUT 6 OUTQ OUTQSENSE ...

Page 4

... OUTQ; note 2 5 analog data sense output for OUT; for test purposes output 15 supply supply voltage 4 Product specification TZA3013A; TZA3013B DESCRIPTION ...

Page 5

... Fig.4 Logic level symbol definitions for data outputs OUT and OUTQ. 2001 Feb 26 The TZA3013 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 1.7 mA (p-p). This is implemented by an AGC loop which reduces the preamplifier feedback resistance so that the amplifier remains linear over the whole input range ...

Page 6

... PIN diode bias voltage is correctly filtered to achieve the highest possible level of sensitivity handbook, halfpage 30 R1 270 TZA3013 MGU120 Fig.6 6 Product specification TZA3013A; TZA3013B 0.862 V preferable if there is one available on the PCB, leaving DREF 1 270 ...

Page 7

... To achieve the wide dynamic range requires the gain of the amplifier to depend on the level of the input signal. This is achieved in the TZA3013 by an AGC loop. The AGC loop comprises a peak detector, a hold capacitor and a gain control circuit. The peak detector detects the amplitude of the signal and the hold capacitor stores it ...

Page 8

... V; minimum and maximum values are valid over the entire ambient CC CONDITIONS AC-coupled without input signal measured differentially; AC-coupled 0 referenced to input 1.8 GHz third-order i Bessel filter; note 1 8 Product specification TZA3013A; TZA3013B MIN. MAX. 0.5 +3.8 0.5 +2 4.0 +4.0 10 +10 0.2 +0 ...

Page 9

... A (p-p) i single-ended; DC tested 20% to 80% 80% to 20% = 0.5 pF comprising 0.4 pF (photodiode) and 0.1 pF (allowed for PCB layout corresponding to change in supply voltage ( MHz will typically add an extra 120 Product specification TZA3013A; TZA3013B MIN. TYP. MAX 240 270 340 1700 ...

Page 10

... Fig.9 MGT107 handbook, halfpage V I(bias) (mV) 3.4 3 (V) (1) V (2) V (3) V Fig.11 Input bias voltage as a function of the 10 Product specification TZA3013A; TZA3013B 3.0 3.2 3.4 Supply current as a function of the supply voltage. 965 925 885 845 805 765 ...

Page 11

... V 2001 Feb 26 MGT109 handbook, halfpage V o(cm) (mV) (1) (2) 3.4 3 (V) (1) V (2) V (3) V Fig.13 Common mode output voltage as a function . CC 11 Product specification TZA3013A; TZA3013B 340 300 260 220 180 the junction temperature referenced ...

Page 12

... PORT 330 IN TZA3013 R 1 PRBS 60 GND and is calculated by the equation Fig.15 Test circuit. 12 TZA3013A; TZA3013B transmission line 100 100 PORT 100 nF OUT SAMPLING OSC 1 OUTQ 100 MGT113 ...

Page 13

... PAD TZA3013BU +116 13 +110 7 +256 8 +398 9 +448 10 +448 11 +410 12 +260 +110 6 +116 Product specification TZA3013A; TZA3013B (1) COORDINATES x y 440 +155 440 +10 440 157 266 255 40 255 40 +255 255 +255 255 255 79 +70 +255 +255 +255 255 40 +255 ...

Page 14

... INQ 1230 m Fig.16 Bonding pad locations of the TZA3013AU. Physical characteristics of the bare die PARAMETER Glass passivation 0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 90 except pads 2 and 3 which have exposed metallization of 80 ...

Page 15

... Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of the die the responsibility of the customer to test and qualify their application in which the die is used. 15 Product specification TZA3013A; TZA3013B (1) Philips Semiconductors ...

Page 16

... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM ...

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