HM628512B Hitachi Semiconductor, HM628512B Datasheet

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HM628512B

Manufacturer Part Number
HM628512B
Description
4 M SRAM (512-kword x 8-bit)
Manufacturer
Hitachi Semiconductor
Datasheet

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Description
The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword
higher performance and low power consumption by employing 0.35 m Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP,
is available for high density mounting. The HM628512B is suitable for battery backup system.
Features
Single 5 V supply
Access time: 55/70 ns (max)
Power dissipation
Completely static memory. No clock or timing strobe required
Equal access and cycle times
Common data input and output: Three state output
Directly TTL compatible: All inputs and outputs
Battery backup operation
Active: 50 mW/MHz (typ)
Standby: 10 W (typ)
4 M SRAM (512-kword
HM628512B Series
8-bit)
8-bit. It realizes higher density,
ADE-203-903D (Z)
Aug. 24, 1999
Rev. 3.0

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HM628512B Summary of contents

Page 1

... Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system. Features Single 5 V supply ...

Page 2

... HM628512B Series Ordering Information Type No. Access time HM628512BLP HM628512BLP HM628512BLP-5SL 55 ns HM628512BLP-7SL 70 ns HM628512BLP-5UL 55 ns HM628512BLP-7UL 70 ns HM628512BLFP HM628512BLFP HM628512BLFP-5SL 55 ns HM628512BLFP-7SL 70 ns HM628512BLFP-5UL 55 ns HM628512BLFP-7UL 70 ns HM628512BLTT HM628512BLTT HM628512BLTT-5SL 55 ns HM628512BLTT-7SL 70 ns HM628512BLTT-5UL 55 ns ...

Page 3

... OE 24 A10 I/O7 21 I/O6 20 I/O5 19 I/O4 18 I/O3 17 HM628512B Series HM628512BLTT Series (Top view) HM628512BLRR Series (Top view A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 A18 A16 ...

Page 4

... HM628512B Series Block Diagram A18 A16 A12 A14 I/O0 I/ • • • Memory Matrix Row • 1,024 • Decoder • Column I/O • Input Column Decoder Data Control A13 A17A15 A8 • • Timing Pulse Generator Read/Write Control V V 4,096 • ...

Page 5

... Symbol Topr Tstg Tbias 30 ns Min 4 2 –0 HM628512B Series Dout pin Ref. cycle High-Z — High-Z — Dout Read cycle Din Write cycle (1) Din Write cycle (2) Value –0 –0. 0.3* CC 1.0 –20 to +70 –55 to +125 – ...

Page 6

... HM628512B Series DC Characteristics (Ta = – Parameter Input leakage current Output leakage current Operating power supply current: DC Operating power supply current Operating power supply current Standby power supply current: DC Standby power supply current (1 Output low voltage Output high voltage Notes: 1. Typical values are ...

Page 7

... Chip select access time Output enable to output valid Chip selection to output in low-Z Output enable to output in low-Z Chip deselection to output in high-Z Output disable to output in high-Z Output hold from address change = 5 V 10%, unless otherwise noted.) CC (100 pF) (HM628512B-7) L (50 pF) (HM628512B-5) L HM628512B -5 Symbol Min Max ...

Page 8

... HM628512B Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time WE to output in high-Z Data to write time overlap Data hold from write time Output active from output in high-Z Output disable to output in high-Z Notes: 1 ...

Page 9

... Timing Waveforms Read Timing Waveform ( Address CS OE Dout ) OLZ HM628512B Series OHZ Valid Data ...

Page 10

... HM628512B Series Write Timing Waveform (1) (OE Clock) Address Dout Din OHZ Valid Data ...

Page 11

... Write Timing Waveform (2) (OE Low Fixed) Address Dout Din WHZ t DW Valid Data HM628512B Series * *11 11 ...

Page 12

... HM628512B Series Low V Data Retention Characteristics (Ta = – Parameter V for data retention CC Data retention current Chip deselect to data retention time t Operation recovery time Notes: 1. For L-version and 20 A (max – For L-SL-version and 3 A (max –20 to +40 C. ...

Page 13

... Package Dimensions HM628512BLP Series (DP-32) 42.50 Max 32 1 2.30 Max 2.54 0.25 41. 1.20 0.48 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) HM628512B Series Unit: mm 15.24 + 0.11 0.25 – 0.05 0 – 15 DP-32 — Conforms 5 ...

Page 14

... HM628512B Series Package Dimensions (cont.) HM628512BLFP Series (FP-32D) 20.45 20.95 Max 32 1 1.00 Max 1.27 *0.40 0.08 0.38 0.06 *Dimension including the plating thickness Base material dimension 0.10 0.15 M 14.14 0.30 1.42 0.80 0.20 Hitachi Code FP-32D JEDEC Conforms EIAJ — Weight (reference value) 1.3 g Unit – 8 ...

Page 15

... Package Dimensions (cont.) HM628512BLTT Series (TTP-32D) 20.95 21.35 Max 32 1 *0.42 0.08 0.21 0.40 0.06 1.15 Max 0.10 *Dimension including the plating thickness Base material dimension 17 16 1.27 M 11.76 Hitachi Code JEDEC EIAJ Weight (reference value) HM628512B Series Unit: mm 0.80 0.20 0 – 5 0.50 0.10 TTP-32D Conforms — 0. ...

Page 16

... HM628512B Series Package Dimensions (cont.) HM628512BLRR Series (TTP-32DR) 20.95 21.35 Max 1 32 *0.42 0.08 0.21 0.40 0.06 1.15 Max 0.10 *Dimension including the plating thickness Base material dimension 1.27 M 11.76 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.80 0.20 0 – 5 0.50 0.10 TTP-32DR Conforms — 0.51 g ...

Page 17

... Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 HM628512B Series Hitachi Asia (Hong Kong) Ltd. Hitachi Asia Pte. Ltd. Group III (Electronic Components) 16 Collyer Quay #20-00 7/F., North Tower, World Finance Centre, Hitachi Tower ...

Page 18

... HM628512B Series Revision Record Rev. Date Contents of Modification 0.0 Apr. 24, 1998 Initial issue 0.1 Nov. 19, 1998 DC Characteristics I SB1 Low V I CCDR Change of note1 and 2 1.0 Jan. 13, 1999 Deletion of Preliminary Features Change of Power dissipation Standby: TBD (typ (typ) DC Characteristics I SB1 Low V I CCDR 2.0 Apr. 8, 1999 ...

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