TC58FVB321FT Toshiba Semiconductor, TC58FVB321FT Datasheet - Page 19

• Manufacturer Part Number: TC58FVB321FT
• Description: (TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: Toshiba Semiconductor

ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
RECOMMENDED DC OPERATING CONDITIONS
V
V
V
V
V
P
T
T
T
I
(1) Outputs should be shorted for no more than one second.
TSOPI
C
C
C
This parameter is periodically sampled and is not tested for every device.
TFBGA
C
C
C
This parameter is periodically sampled and is not tested for every device.
V
V
V
V
V
Ta
(1) −2 V (pulse width of 20 ns max)
(2) +2 V (pulse width of 20 ns max)
(3) Do not apply V
OSHORT
SOLDER
STG
OPR
DD
IN
DQ
IDH
ACCH
D
IN
OUT
IN2
IN
OUT
IN2
DD
IH
IL
ID
ACC
SYMBOL
SYMBOL
SYMBOL
SYMBOL
No more than one output should be shorted at a time.
V
Input Voltage
Input/Output Voltage
Maximum Input Voltage for A9, OE and RESET
Maximum Input Voltage for
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
Output Short-Circuit Current
Input Pin Capacitance
Output Pin Capacitance
Control Pin Capacitance
Input Pin Capacitance
Output Pin Capacitance
Control Pin Capacitance
V
Input High-Level Voltage
Input Low-Level Voltage
High-Level Voltage for A9, OE and RESET
High-Level Voltage for
Operating Temperature
DD
DD
ID
Supply Voltage
Supply Voltage
/V
(Ta = = = = 25°C, f = = = = 1 MHz)
ACC
when the supply voltage is not within the device’s recommended operating voltage range.
PARAMETER
WP
/ACC
(1)
WP
PARAMETER
PARAMETER
PARAMETER
/ACC
(3)
(3)
TC58FVT321/B321FT/XB-70,-10
−0.6~V
−0.6~V
CONDITION
CONDITION
V
V
0.7 × V
V
V
V
V
−0.6~4.6
−55~150
OUT
OUT
RANGE
DD
DD
−40~85
−0.3
IN
IN
IN
IN
13.0
10.5
MIN
11.4
126
260
100
−40
2.7
8.5
+ 0.5 (≤ 4.6)
+ 0.5 (≤ 4.6)
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
(1)
DD
2002-08-06 19/48
V
0.2 × V
DD
MAX
MAX
MAX
12.6
3.6
9.5
85
+ 0.3
4
8
7
4
8
7
DD
(2)
UNIT
UNIT
UNIT
UNIT
mW
mA
°C
°C
°C
pF
pF
pF
pF
pF
pF
°C
V
V
V
V
V
V