TE28F008B3xxx Intel, TE28F008B3xxx Datasheet - Page 5

• Manufacturer Part Number: TE28F008B3xxx
• Description: (TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
• Manufacturer: Intel

1.0
This datasheet contains the specifications for the
Advanced Boot Block flash memory family, which is
optimized for low power, portable systems. This
family of products features 1.65 V–2.5 V or 2.7 V–
3.6 V I/Os and a low V
2.7 V–3.6 V
operations. In addition this family is capable of fast
programming at 12 V. Throughout this document,
the term “2.7 V” refers to the full voltage range
2.7 V–3.6 V (except where noted otherwise) and
“V
2.0 provide an overview of the flash memory family
including applications, pinouts and pin descriptions.
Section 3.0 describes the memory organization and
operation for these products. Sections 4.0 and 5.0
contain
Sections 6.0 and 7.0 provide ordering and other
reference information.
NOTES:
1.
2.
V
V
V
Bus Width
Speed
Memory Arrangement
Blocking (top or bottom)
Locking
Operating Temperature
Program/Erase Cycling
Packages
PP
CC
CCQ
PP
PRELIMINARY
4-Mbit and 32-Mbit density not available in 40-lead TSOP.
4-Mbit density not available in BGA* CSP.
Program/Erase Voltage
= 12 V” refers to 12 V ±5%. Section 1.0 and
Read Voltage
I/O Voltage
INTRODUCTION
the
Feature
for
operating
read,
Table 1. Smart 3 Advanced Boot Block Feature Summary
CC
/V
specifications.
program,
PP
operating range of
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit),
4096 Kbit x 8 (32 Mbit)
40-lead TSOP
28F008B3, 28F016B3,
Sixty-three 64-Kbyte main blocks (32-Mbit)
Thirty-one 64-Kbyte main blocks (16-Mbit)
28F032B3
and
BGA* CSP
WP# locks/unlocks parameter blocks
Eight 8-Kbyte parameter blocks and
All other blocks protected using V
Fifteen 64-Kbyte blocks (8-Mbit) or
Seven 64-Kbyte blocks (4-Mbit) or
8-bit
2.7 V– 3.6 V or 11.4 V– 12.6 V
Finally,
1.65 V–2.5 V or 2.7 V– 3.6 V
80 ns, 90 ns, 100 ns, 110 ns
Extended: –40 C to +85 C
erase
(1)
, 48-Ball
(1)
(2)
100,000 cycles
2.7 V– 3.6 V
1.1
The Smart 3 Advanced Boot Block flash memory
features
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit)
2048 Kbit x 16 (32 Mbit)
Enhanced blocking for easy segmentation of
code and data or additional design flexibility
Program Suspend to Read command
V
Figures 1 through 4 for pinout diagrams and
V
Maximum program and erase time specification
for improved data storage.
28F400B3
48-Lead TSOP, 48-Ball
28F160B3, 28F320B3
CCQ
CCQ
SMART 3 ADVANCED BOOT BLOCK
Smart 3 Advanced Boot Block
Flash Memory Enhancements
location
input of 1.65 V–2.5 V on all I/Os. See
BGA CSP
16 bit
(2),
28F800B3,
PP
(2)
Section 4.2, 4.4
Section 4.2, 4.4
Section 4.2, 4.4
Table 3
Section 4.5
Section 2.2
Section 2.2
Appendix D
Section 3.3
Table 8
Section 4.2, 4.4
Section 4.2, 4.4
Figure 3, Figure 4
Reference
5