LH5164AH Sharp Electrionic Components, LH5164AH Datasheet - Page 4

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LH5164AH

Manufacturer Part Number
LH5164AH
Description
CMOS 64K (8K x 8) Static RAM
Manufacturer
Sharp Electrionic Components
Datasheet

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LH5164A/AH
AC CHARACTERISTICS
(1) READ CYCLE (V
(2) WRITE CYCLE (V
NOTES:
1. T
2. Active output to high-impedance and high-impedance to output active tests specified for a 200 mV transition
AC TEST CONDITIONS
NOTE:
1. Includes scope and jig capacitance.
4
Read cycle time
Address access time
Chip enable
access time
Output enable access time
Output hold time
Chip enable to
output in Low-Z
Output enable to output in
Low-Z
Chip enable to
output in High-Z
Output disable to output in
High-Z
Write cycle time
Chip enable to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Data valid to end of write
Data hold time
Output active from end of write
WE to output in High-Z
OE to output in High-Z
Input voltage amplitude
Input rise/fall time
Timing reference level
Output load conditions
from steady state levels into the test load.
A
= -10 to +70 C (LH5164A/AD/AN/AT), T
PARAMETER
PARAMETER
PARAMETER
(CE
(CE
(CE
(CE
(CE
(CE
CC
1
2
1
2
1
2
CC
)
)
)
)
)
)
= 5 V 10%)
= 5 V 10%)
1
SYMBOL
1TTL + C
t
t
t
ACE1
ACE2
t
t
t
t
t
t
t
t
t
OHZ
OLZ
HZ1
HZ2
LZ1
LZ2
RC
OE
OH
AA
0.6 to 2.4 V
SYMBOL
A
MODE
10 ns
1.5 V
t
t
t
t
t
t
t
t
t
t
t
OHZ
WC
CW
WR
DW
OW
AW
WP
WZ
= -40 to +85 C (LH5164AH/AHD/AHN/AHT)
DH
AS
L
(100 pF)
MIN.
80
10
10
10
5
0
0
0
80 ns
MIN.
80
70
70
60
40
10
0
0
0
0
0
MAX.
80
80
80
40
30
30
20
80 ns
NOTE
1
MAX.
30
20
MIN.
100
10
10
10
5
0
0
0
100 ns
MIN.
100
80
80
60
40
10
MAX.
0
0
0
0
0
100
100
100
40
30
30
20
100 ns
CMOS 64K (8K
MAX.
UNIT
30
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
UNIT
1
1
1
1
1
1
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8) Static RAM
NOTE
2
2
2

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