AT28HC64B ATMEL Corporation, AT28HC64B Datasheet - Page 4

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AT28HC64B

Manufacturer Part Number
AT28HC64B
Description
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection
Manufacturer
ATMEL Corporation
Datasheet

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Operating Modes
DC Characteristics
Device Operation (Continued)
DEVICE IDENTIFICATION: A n e x t r a 6 4 - b y t e s o f
EEPROM memory are available to the user for device
identification. By raising A9 to 12V
DC and AC Operating Range
Notes: 1. X can be V
Note:
2-270
Symbol
I
I
I
I
I
V
V
V
V
Operating
Temperature (Case)
V
LI
LO
SB1
SB2
CC
Mode
Read
Write
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
Chip Erase
IL
IH
OL
OH
CC
Power Supply
2. Refer to the AC Write Waveforms diagrams
1. I
(2)
in this data sheet.
SB1
Input Load Current
Output Leakage Current
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
and I
Parameter
CC
CC
CC
Active Current
Standby Current CMOS
Standby Current TTL
SB2
IL
AT28HC64B
or V
for the 55 ns part is 40 mA maximum.
IH
Com.
Ind.
.
AT28HC64B-55
0.5V and using ad-
V
CE
V
V
V
0°C - 70°C
X
X
X
5V
IH
IL
IL
IL
Condition
V
V
CE = V
CE = 2.0V to V
f = 5 MHz; I
I
I
OL
OH
10%
IN
I/O
= 2.1 mA
= 0V to V
= -400 A
= 0V to V
CC
- 0.3V to V
OUT
CC
AT28HC64B-70
CC
CC
-40°C - 85°C
= 0 mA
V
0°C - 70°C
+ 1V
X
5V
OE
V
V
3. V
dress locations 1FC0H to 1FFFH, the additional bytes
may be written to or read from in the same manner as the
regular memory array.
V
V
H
+ 1V
X
IL
IH
(1)
IL
IH
(3)
CC
H
10%
= 12.0V
+ 1V
Com., Ind.
0.5V.
AT28HC64B-90
-40°C - 85°C
0°C - 70°C
5V
WE
V
V
V
V
X
X
X
IL
IH
IH
IL
10%
Min
2.0
2.4
AT28HC64B-120
I/O
D
D
High Z
High Z
High Z
100
OUT
IN
-40°C - 85°C
Max
2
0.8
.40
0°C - 70°C
10
10
40
5V
(1)
(1)
10%
Units
mA
mA
V
V
V
V
A
A
A

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