93LC76-ISN Microchip Technology, 93LC76-ISN Datasheet - Page 2

no-image

93LC76-ISN

Manufacturer Part Number
93LC76-ISN
Description
8K/16K 2.5V Microwire Serial EEPROM
Manufacturer
Microchip Technology
Datasheet
95SQ015
Bulletin PD-2.273 rev. C 05/02
Electrical Specifications
2
Voltage Ratings
Absolute Maximum Ratings
Thermal-Mechanical Specifications
V
I
C
L
dv/dt Max. Voltage Rate of Change
T
T
R
R
wt
V
V
I
I
E
I
RM
F(AV)
FSM
AR
S
FM
J
stg
AS
R
RWM
T
thJL
thJA
Parameters
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current (1)
* See Fig. 2
Max. Junction Capacitance
Typical Series Inductance
(Rated V
Parameters
Max. Average Forward Current
* See Fig. 5
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Parameters
Max. Junction Temperature Range
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Lead
Typical Thermal Resistance,
Junction to Air
Approximate Weight
Case Style
R
)
(1)
1.4(0.049) g (oz.)
-55 to 125
-55 to 150
95SQ Units
95SQ Units
95SQ Units
10000
1300
2900
0.31
0.37
0.25
0.31
10.0
4.50
DO - 204AR
348
310
190
400
8.0
44
7
9
1
V/ µs
°C/W
°C/W
mA
mA
mA
mA
mJ
nH
pF
°C
°C
V
V
V
V
A
A
A
DC operation
1/8 inch lead leangth
JEDEC
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 µsec
Frequency limited by T
@ 9A
@ 18A
@ 9A
@ 18A
T
T
T
T
V
Measured lead to lead 5mm from body
J
J
J
J
J
R
= 25 °C, I
= 25 °C
= 100 °C
= 100 °C
= 100 °C
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
AS
Conditions
Conditions
Conditions
= 1 Amps, L = 9 mH
* See Fig. 4
(1) Pulse Width < 300µs, Duty Cycle < 2%
V
T
T
V
V
J
J
R
R
R
C
= 25 °C
= 75 °C
= 55° C, rectangular wave form
= rated V
= 12V
= 5V
95SQ015
J
max. V
15
25
R
A
= 3 x V
with rated V
Following any rated
load condition and
R
typical
www.irf.com
RRM
applied

Related parts for 93LC76-ISN