NLAS44599-D ON Semiconductor, NLAS44599-D Datasheet

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NLAS44599-D

Manufacturer Part Number
NLAS44599-D
Description
Low Voltage Single Supply Dual DPDT Analog Switch
Manufacturer
ON Semiconductor
Datasheet
NLAS44599
Low Voltage Single Supply
Dual DPDT Analog Switch
pole−double throw (DPDT) analog switch fabricated with silicon
gate CMOS technology. It achieves high speed propagation delays
and low ON resistances while maintaining CMOS low power
dissipation. This DPDT controls analog and digital voltages that may
vary across the full power−supply range (from V
lower and more linear over input voltage than R
analog switches.
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
demultiplexer analog switch with two Select pins that each controls
two multiplexer−demultiplexers.
December, 2004 − Rev. 12
The NLAS44599 is an advanced dual−independent CMOS double
The device has been designed so the ON resistance (R
The channel select input is compatible with standard CMOS outputs.
The channel select input structure provides protection when
The NLAS44599 can also be used as a quad 2−to−1 multiplexer−
Channel Select Input Over−Voltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: I
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
ESD Performance: Human Body Model; > 2000 V,
Chip Complexity: 158 FETs
Semiconductor Components Industries, LLC, 2004
Machine Model; > 200 V
CC
= 2 mA (Max) at T
ON
CC
A
of typical CMOS
to GND).
= 25 C
ON
) is much
1
*Previous releases of this device may be marked as
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
16
shown in this diagram.
CASE 485G
MN SUFFIX
CASE 948F
DT SUFFIX
TSSOP−16
QFN−16
1
ORDERING INFORMATION
A
L
Y
W
http://onsemi.com
1
16
Part Marking
= Assembly Location
= Wafer Lot
= Year
= Work Week
Current
ALYW
4459
AS
Publication Order Number:
DIAGRAMS
16
1
MARKING
ALYW
NLAS
4459
1
Part Marking*
NLAS44599/D
16
Previous
ALYW
C
9
8

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NLAS44599-D Summary of contents

Page 1

... This input structure helps prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. The NLAS44599 can also be used as a quad 2−to−1 multiplexer− demultiplexer analog switch with two Select pins that each controls two multiplexer−demultiplexers. ...

Page 2

... TSSOP−16 PACKAGE COM SELECT COM GND Figure 1. Logic Diagram NLAS44599 Select COM SCD SELECT AB COM A COM B SELECT COM COM D 14 ...

Page 3

... NLAS44599 Parameter ) COM TSSOP−16 Oxygen Index: 30% − 35% Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Above V and Below GND at 125 C (Note 4) CC TSSOP−16 Parameter = 3 ...

Page 4

... DC ELECTRICAL CHARACTERISTICS − Analog Section Symbol Parameter R Maximum “ON” Resistance ON (Figures 17 − 23 Resistance Flatness FLAT (ON) (Figures 17 − 23 Off Leakage NC(OFF) Current (Figure 9) I NO(OFF) I COM ON Leakage Current COM(ON) (Figure 9) NLAS44599 Condition V CC 2.0 2.5 3.0 4.5 5.5 2.0 2.5 3.0 4 GND 5 5 GND 0 ...

Page 5

... Bandwidth or Minimum Frequency Response (Figure 11) V Maximum Feedthrough On Loss ONL V Off−Channel Isolation (Figure 10) ISO Q Charge Injection Select Input to Common I/O (Figure 15) THD Total Harmonic Distortion THD + Noise (Figure 14) VCT Channel−to−Channel Crosstalk NLAS44599 (Input 3.0 ns *555C to 255C (V) ...

Page 6

... DUT V Output CC 0.1 mF 300 W Switch Select Pin DUT V Output CC 0.1 mF Open Input V DUT Output Open Input NLAS44599 V CC Input GND V OUT 35 pF Output GND Figure 4. t (Time Break−Before−Make) BBM V CC Input OUT 300 Output V OL Figure ...

Page 7

... DUT Open Output 100 10 1 0.1 0.01 0.001 −55 Figure 9. Switch Leakage vs. Temperature NLAS44599 DUT Reference Input Output , Bandwidth and V are independent of the input signal direction. ONL V OUT for V at 100 kHz OUT for V at 100 kHz to 50 MHz ...

Page 8

... V (VOLTS) CC Figure 12. t and t vs OFF 3.0 V INpp 5.0 V INpp FREQUENCY (kHz) Figure 14. Total Harmonic Distortion Plus Noise vs. Frequency NLAS44599 0 1.0 2.0 3.0 4.0 5.0 6 10.0 0.01 10 100 200 Figure 11. Typical Bandwidth and Phase Shift 30 ...

Page 9

... V (VDC) IS Figure 18 Temp 125 − 0.0 0.5 1.0 1.5 2.0 V (VDC) IS Figure 20. R vs. Temp NLAS44599 100 0.0 1.0 80 100 120 = 3 V & Figure 17 100 125 C 0 2.0 2.5 0.0 0.5 = 2.0 V Figure 19 ...

Page 10

... DEVICE ORDERING INFORMATION Device Order Circuit Number Indicator Technology NLAS44599MNR2 NL NLAS44599DTR2 NL NLAS44599MN NL NLAS44599DT NL †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NLAS44599 3.5 4.0 4.5 5.0 0.0 0 Device Nomenclature ...

Page 11

... X SIDE VIEW 16X 5 8 NOTE 16X 16X 0. BOTTOM VIEW 0.05 C NOTE 3 NLAS44599 PACKAGE DIMENSIONS QFN−16 MN SUFFIX CASE 485G−01 ISSUE SEATING PLANE A1 SOLDERING FOOTPRINT C 0.575 0.022 EXPOSED PAD E2 3.25 0.128 e http://onsemi.com 11 NOTES: 1 ...

Page 12

... J1 0.09 0.16 0.004 K 0.19 0.30 0.007 K1 0.19 0.25 0.007 L 6.40 BSC 0.252 BSC Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NLAS44599/D MAX 0.200 0.177 0.047 0.006 0.030 0.011 0.008 0.006 0.012 0.010 _ 8 ...

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