ADG774 Analog Devices, ADG774 Datasheet - Page 2

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ADG774

Manufacturer Part Number
ADG774
Description
CMOS 3 V/5 V/ Wide Bandwidth Quad 2:1 Mux
Manufacturer
Analog Devices
Datasheet

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ADG774–SPECIFICATIONS
SINGLE SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version, –40 C to +85 C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
C
C
C
I
I
I
ON
OFF
DD
IN
O
S
D
D
Channels ( R
I
INL
(OFF)
, C
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
INH
(V
S
D
(OFF)
(OFF)
DD
, I
FLAT(ON)
= +5 V
S
(ON)
2
D
)
10%, GND = 0 V. All specifications T
+25 C
2.2
0.15
0.001
0.001
0.01
0.5
0.01
0.5
0.01
0.5
B Version
T
T
0 V to V
5
0.5
1
2.4
0.8
10
20
4
8
5
1
–65
–75
240
0.5
10
10
20
30
1
1
100
1
1
1
0.5
MIN
MAX
to
DD
–2–
Units
V
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
mA max
A typ
A max
A max
A typ
A typ
typ
max
typ
max
typ
max
MIN
to T
MAX
unless otherwise noted.)
Test Conditions/Comments
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
V
R
V
R
V
R
V
R
R
R
R
C
f = 1 kHz
f = 1 kHz
f = 1 MHz
V
Digital Inputs = 0 V or V
V
V
D
D
D
D
D
D
IN
L
S
L
S
L
S1
L
L
L
L
L
DD
IN
S
/V
= 100 , C
= +3 V; Test Circuit 4
= 100 , C
= +3 V; Test Circuit 4
= 100 , C
= 100
= 0 V to V
= 100 , f = 10 MHz; Test Circuit 7
= 100 , f = 10 MHz; Test Circuit 8
= 100 ; Test Circuit 6
= 1 nF; Test Circuit 9
= 0 V to V
= 0 V to V
= 4.5 V, V
= 4.5 V, V
= V
= V
= V
= +5 V
D
= +5.5 V
= 0 V
S
S2
INL
= 4.5 V; V
= +5 V; Test Circuit 5
or V
DD
DD
DD
S
S
L
L
L
= 1 V; V
= 1 V; V
INH
= 35 pF,
= 35 pF,
= 35 pF,
, I
, I
; I
S
S
S
D
= –10 mA
= –10 mA
= –1 mA
= V
D
D
S
DD
= 1 V, V
= 1 V, V
= 1 V; Test Circuit 3
S
S
= 4.5 V;
= 4.5 V;
REV. 0

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