GS71108AGJ-10 ETC2 [List of Unclassifed Manufacturers], GS71108AGJ-10 Datasheet - Page 7

• Manufacturer Part Number: GS71108AGJ-10
• Description: 128K x 8 1Mb Asynchronous SRAM
• Manufacturer: ETC2 [List of Unclassifed Manufacturers]

Write Cycle
* These parameters are sampled and are not 100% tested
Rev: 1.08 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Low Z from end of write
Address valid to end of write
Chip enable to end of write
Write recovery time (WE)
Write recovery time (CE)
Write to output in High Z
Address set up time
Write pulse width
Data set up time
Write cycle time
Data hold time
Parameter
Data Out
WE
Data In
Address
CE
OE
Symbol
tWHZ
tWLZ
tWR1
tWC
tCW
tDW
tWR
tAW
tWP
tDH
tAS
*
*
Write Cycle 1: WE control
Min
—
t
7
5
5
3
0
5
0
0
0
3
AS
7/16
-7
Max
—
—
—
—
—
—
—
—
—
—
3
t
WHZ
t
AW
t
t
CW
WC
Min
5.5
5.5
5.5
—
8
4
0
0
0
0
3
t
WP
-8
H
IGH IMPEDANCE
Max
3.5
—
—
—
—
—
—
—
—
—
—
t
DW
D
ATA VALID
Min
10
—
7
7
5
0
7
0
0
0
3
t
WLZ
t
DH
-10
t
WR
Max
—
—
—
—
—
—
—
—
—
—
4
GS71108ATP/J/SJ/U
Min
12
—
8
8
6
0
8
0
0
0
3
© 2001, GSI Technology
-12
Max
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns